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ECE4430 Project Presentation

ECE4430 Project Presentation. BETA-MULTIPLIER REFERENCE GENERATOR BANDGAP REFERENCE GENERATOR GROUP3 – DEBASHIS BANERJEE JASON PINTO ASHITA MATHEW. DESIGN SPECIFICATIONS. Technology Node – TSMC 0.18µm Required Design Specifications. BMR -TOPOLOGY USED.

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ECE4430 Project Presentation

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  1. ECE4430 Project Presentation BETA-MULTIPLIER REFERENCE GENERATOR BANDGAP REFERENCE GENERATOR GROUP3 – DEBASHIS BANERJEE JASON PINTO ASHITA MATHEW

  2. DESIGN SPECIFICATIONS Technology Node – TSMC 0.18µm Required Design Specifications

  3. BMR -TOPOLOGY USED

  4. BMR- DESIGN CALCULATIONS Using these we get: Sweeping to set current, we get

  5. BMR- ACHIEVED SPECIFICATIONS

  6. Vref- VDD Sweep Iref- VDD Sweep Vref= 0.718V Startup transient response Startup time:460.6nsec

  7. Current sensitivity with supply voltage = 611.9ppm @37˚C Voltage sensitivity with supply voltage= 9333ppm @37˚C

  8. PSRR of Vref = 40dB PSRR of Iref PSRR of Iref = 125e6 mho PSRR of Vref

  9. Iref changes by 1.818nA for +-10% variation in Vthp Iref changes by 0.02uA for +-10% variation in Vthn

  10. TCIref of 3323 ppm/ ˚C at 37 ˚C TCVref of 3202ppm/ ˚C @ 37˚C

  11. BGR TOPOLOGY USED

  12. DIFFERENTIAL AMP STRUCTURE

  13. BGR DESIGN CALCULATIONS With the above values of L,N,R we observed that the ICTAT and IPTAT fail to cancel out exactly at 37 deg C. So through simulations we have adjusted R,L,N to obtain the desired characteristics. The values obtained are L = 8.5, N=4.84, R= 9.84K

  14. ACHIEVED SPECIFICATIONS

  15. Vref – Voltage Sweep Iref – Voltage Sweep Vdd min =901mV Vdd min =904mV Vdd max =2.786V Vdd max =2.788V Vref =0.697V Iref =14.61uA Vref- Temp Sweep Iref- Temp Sweep 700.9mV @ 37.03C 14.69uA @ 37.01C

  16. TCVref TCIref Temp sensitivity = 0.39ppm Temp sensitivity =4.15ppm Voltage Sensitivity - Vref Voltage Sensitivity - Iref Volt sensitivity = 5213ppm Volt sensitivity = 5229ppm

  17. PSRR for Iref PSRR for Vref PSRR = 2.18*107 mho PSRR = 53.2dB Start up delay Power consumption Power consumption= 63uW Start up delay = 189ns

  18. Δ IREF WITH VTH VARIATION Δ IREF for 10% variation in Vthp = 1.925nA Δ IREF for 10% variation in Vthn = 124.8nA

  19. DEVIATION FROM SPECS

  20. CONCLUSION • Temperature sensitivity was observed to be better in a BGR than compared to a BMR because there is PTAT and CTAT cancellation. • Voltage sensitivity is much better in BMR than in BGR. • Supply sensitivity is better with stacked devices , but since the supply voltage is small, we cannot use cascode topology. • Both BMR and BGR are supposed to work at low frequency. So we used a min value of L = 4*0.18um. This led to a high output impedance and hence lesser voltage sensitivity. • Careful design of a high gain differential amplifier would lead to a much better voltage sensitivity.

  21. Thank you… Questions??

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