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Market s for Silicon Carbide Devices Olivier Nowak, WTC – Wicht Technologie Consulting, Munich EPE 2005 September 12, 20

Market s for Silicon Carbide Devices Olivier Nowak, WTC – Wicht Technologie Consulting, Munich EPE 2005 September 12, 2005. Agenda. 1 Context 2 Markets Drivers and Challenges Conclusion . Consulting company specialising in marketing of MEMS and microelectronics Founded in 2000

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Market s for Silicon Carbide Devices Olivier Nowak, WTC – Wicht Technologie Consulting, Munich EPE 2005 September 12, 20

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  1. Markets for Silicon Carbide DevicesOlivier Nowak, WTC – Wicht Technologie Consulting, MunichEPE 2005September 12, 2005

  2. Agenda • 1 Context • 2 Markets • Drivers and Challenges • Conclusion www.wtc-consult.de

  3. Consulting company specialising in marketing of MEMS and microelectronics Founded in 2000 Located in Munich Business Market analysis Business development Strategy planning Setup of EU projects 8 consultants Some customers Infineon Matsushita Süss MicroTec EVG CEA LETI ARC Seibersdorf Studies NEXUS MST market analysis RF MEMS SiC WTC – Wicht Technologie Consulting www.wtc-consult.de

  4. Position of SiC on the hype curve Ca. 1997 First SiC wafers Visibility 2009 today Thanks to the Gartner Group for formalising the hype curve SiC diodes ramping up, transistors starting Technology trigger Peak of inflated expectations Trough of disillusionment Slope of enlightenment Plateau of productivity Time www.wtc-consult.de

  5. Industry players for SiC devices • Wide bandgap specialists • e.g. Cree, Intrinsic, Semisouth, SiCED • Semiconductor companies • e.g. Infineon, Toshiba, Hitachi, STMicroelectronics, Fairchild, Rohm • Suppliers of aerospace/defense industry • e.g. Dynex, International Rectifiers, Microsemi, Kulite • System companies • e.g. General Electric, Rockwell Scientific, Areva, Siemens • Car makers/suppliers • e.g. Toyota/Nippondenso, Nissan and suppliers of SiC wafers www.wtc-consult.de

  6. SiC Products and R&D PiN diodes Soon (< 2 years) Cree GE Rockwell … Thyristors Cree GE Schottky diodes $10m already Cree Infineon/SiCED Dynex EcoTron GE Mitsubishi Rohm Semisouth Int. Rectifier Rockwell STMicroelectronics … MOSFET Before 2009 Cree Fairchild Mitsubishi Nippondenso Philips Rohm … SiC devices JFET/SIT emerging Northrop Semisouth Cree Infineon/SiCED Hitachi Intrinsic Toshiba Rockwell, … MESFET $3m already Cree New Japan Radio BJT www.wtc-consult.de

  7. Market for SiC devices 2004–2009 market for SiC devices • 2004: $13m • 2009: $53m • Annual growth rate ~25% • ¾ diodes, ¼ transistors • Main applications • Power supplies • Power amplifiers • Motor drives (in 2009) • Negligible contributions from non-power devices www.wtc-consult.de

  8. Non-power SiC devices • Gas sensors • Research by AppliedSensor (S) for automotive exhaust gas • Availability >> 5 years • UV sensors (market < $500K) • Two devices (sglux, IFW) available, based on Cree chips • Small area limits applications • Pressure sensors • On-demand production by Kulite • R&D by FLX Micro, STMicroelectronics • Radiation sensors • Prototype by Westinghouse (Siemens) Gas sensor from Boston Microelectronics UV sensor from IFW Pressure sensor from Kulite www.wtc-consult.de

  9. Drivers for SiC Markets • Smaller power supplies • Increased reliability a bonus • Ever hungrier microprocessors • Energy-efficient motor drives • SiC diodes a first step, combination SiC diode+SiC transistor is target • Smaller size a bonus • Industry and household (air conditioner) applications • High (ambient) temperature operation not a major driver • SOI is enough for automotive (at least for now) • Aerospace up to 300°C also with SOI • Niche markets above >400°C require packaging www.wtc-consult.de

  10. Market challenges www.wtc-consult.de

  11. Applications fields and preferred active materials • Power (non-RF): • Low power: Si • High power, mass markets: SOI • High value, high reliability (IT, medical): SiC • High temperature • <200°C: SOI • 200-400°C: undecided (active-cooled SOI or SiC) • > 400°C: SiC, when R&D is over • RF power: undecided (GaN? SiC? LDMOS? GaAs?) www.wtc-consult.de

  12. Conclusion • ~$13m SiC device market in 2004 • ~75% Schottky diodes • Expected to grow to >$50m in 2009 • Technical challenges are receding, but economic challenges remain • Scarcity of wafer sources • Cost of redesign • Role casting of materials is emerging • SiC for niche power • GaN for RF power (t.b.c.) • SOI for power and high temperature • Most common application of SiC as a semiconductor material is as a substrate for GaN (uses >90% of wafer production) • Today LEDs and LD, possibly HEMT tomorrow www.wtc-consult.de

  13. Silicon Carbide Electronics Markets 2004–2009 • Available now from WTC • 220 pages • 35 company profiles • €3000 • Contact: Olivier Nowak olivier.nowak@wtc-consult.de www.wtc-consult.de

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