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Workshop on Defect Analysis in Radiation Damaged Silicon Detectors

Workshop on Defect Analysis in Radiation Damaged Silicon Detectors. Hamburg, 23./24. August 2006. 1 E. Fretwurst, University of Hamburg 9th RD50 workshop CERN, October 16-18, 2006. Motivation for this Workshop.

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Workshop on Defect Analysis in Radiation Damaged Silicon Detectors

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  1. Workshop on Defect Analysis in Radiation Damaged Silicon Detectors Hamburg, 23./24. August 2006 1 E. Fretwurst, University of Hamburg 9th RD50 workshop CERN, October 16-18, 2006

  2. Motivation for this Workshop • Idea for this workshop was triggered by report on Photo-Luminescence results given by Gordon Davies in RD50 meeting November 2005 • Results on Defect analysis so far mainly based on DLTS, PITS and TSC, other methods only used sporadically • Coordinated effort necessary • Invite specialist for all relevant techniques 2 E. Fretwurst, University of Hamburg 9th RD50 workshop CERN, October 16-18, 2006

  3. Topics Covered • Survey of available tools for defect analysisDLTS, TSC, PL, IR, PITS, other methods.. • Overview on present knowledge of most relevant defects; specific issues still needing clarification; the role of impurities O, C and H • Possibilities for a coordinated project on most important topics making use of all available techniques 3 E. Fretwurst, University of Hamburg 9th RD50 workshop CERN, October 16-18, 2006

  4. Participants Gordon Davies (King’s College London) Eckhart Fretwurst (University of Hamburg Eugenijus Gaubas (University of Vilnius) Frank Hönniger (University of Hamburg) Pawel Kaminsky (ITME Warzaw) Gregor Kramberger (University of Ljubljana) Gunnar Lindström (University of Hamburg) Leonid Makarenko (University of Minsk) David Menichelli (INFN Florence and University of Florence) Leonid Murin (Academy of Science, Minsk and University of Oslo) Ioana Pintilie (NIMP – Bucharest and University of Hamburg) Bengt Svensson (University of Oslo) Juozas Vaitkus (University of Vilnius) Quingyu Wei (MPI-Semiconductor Laboratory, Munich) 4 E. Fretwurst, University of Hamburg 9th RD50 workshop CERN, October 16-18, 2006

  5. Talksto be found in RD50 web page • Techniques:- DLTS: E. Fretwurst, D. Menichelli, L. Mararenko- TSC: I. Pintilie- PL: G. Davies- IR: L. Murin- PITS: P. Kaminsky- Non-traditional methods: J. Vaitkus and E. Gaubas • Defect overview: B. Svensson • S-LHS challenge: G. Lindström • Charge collection: G. Kramberger 5 E. Fretwurst, University of Hamburg 9th RD50 workshop CERN, October 16-18, 2006

  6. Definition of Coordinated Project • Most important issue for S-LHC: charge trapping largely independent on damage by different hadron types and not sensitive on specific silicon material • Two types of material (MCz- and FZ-silicon):Irradiations only at TRIGA-reactor Ljubljana (main reason: year round availability on short term notice) • Start with MCz-material:Fluence range: 3·1011 - 3·1016 n/cm²Samples send to Ljubljana • Methods to be used for investigation:DLTS: Oslo, Hamburg, Florence, MinskTSC: HamburgPL: Imperial College, ITMEIR: OsloPITS ITMEPC, life time: VilniusEPR: ITME, NIMP 6 E. Fretwurst, University of Hamburg 9th RD50 workshop CERN, October 16-18, 2006

  7. Next Meeting foreseen Late April 2007 7 E. Fretwurst, University of Hamburg 9th RD50 workshop CERN, October 16-18, 2006

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