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Ultra-Low Voltage Circuits andProcessor in 180nm to 90nmTechnologies with aSwapped-Body Biasing TechniqueS. Narendra, J. Tschanz, J. Hofsheier, B. Bloechel,S. Vangal, Y. Hoskote, S. Tang, D. Somasekhar,Microprocessor Research, Intel LabsInstructor : Dr.fakhraeiPresented by : Elaheh RahmaniDate : 83.10.10
Outline • Motivation • Forward body bias overview • Low-voltage swapped-body concept • Measurement results -180nm and 130nm test circuits -90nm TCP offload processor • Summary
Motivation: • For ultra-low-energy processors, Vcc is reduced to improve energy efficiency while meeting relaxed frequency targets. • However Vcc reduction by conventional schemes are limited by: (1) Leakage power becoming a larger fraction of total power at low Vcc (2) Severe delay degradation below a certain Vcc (3) Circuit failure at very low Vcc
Forward Body Bias (FBB): • VB = VS : No Body Bias (NBB) • VB < VS : Forward Body Bias (FBB)
Impact of FBB: VB = VS : VBS = 0 : NBB VB < VS : VBS < 0 : FBB VTP↓
LVSB characteristics: • LVSB provides FBB value of Vcc • In the LVSB mode, changing Vcc produces different VT values automatically without needing process change • But, LVSB is more sensitive to supply and ground noise • Unlike conventional FBB, LVSB circuits do not need body bias generators • LVSB circuits has lower VT and better short channel effect than NBB
TCP processor core: TCP=Transmission control protocol TCB=Transmission control block CLB= connection look up block ROB= Reorder block
Measurement summary: • LVSB provides FBB value of Vcc without body bias generators • Compared to NBB, LVSB enables – Over 60% frequency improvement at 500mV – Over 70mV Vcc reduction for iso-frequency – Vccmin reduction of more than 10% – Dynamic LVSB reduces standby power to NBB while providing active operation benefits
References: • [1] S.Narendra, J.Tschanz, “Ultra-Low Voltage Circuits and Processor in 180nm to 90nm Technologies with a Swapped-Body Biasing Technique,”2004 IEEE ISSCC.0-7803-8267-6/04 • [2] Y. Hoskote et al., “A 10GHz TCP Offload Accelerator for 10Gb/s Ethernet in 90nm Dual-Vt CMOS,” ISSCC Dig. Tech. Papers., pp. 258-259, Feb. 2003. • [3] S. Narendra et al., “1.1V 1GHz Communications Router with On-Chip Body Bias in 150nm CMOS,” ISSCC Dig. Tech. Papers., pp. 270-271, Feb. 2002.