Schematic of PQ-Silicon bonding

1. PQ Organic Passivation of Silicon Surfaces (DMR 0819860) IRG B: S. Avasthi, Y. Qi, G. Vertelov, J. Schwartz, A. Kahn, and J. C.Sturm • The dangling bonds on the surfaces of inorganic semiconductors, such as silicon, must be passivated for nearly all electronic devices. This is especially an issue for flexible large-area low/cost devices on plastic, such as solar cells or displays because conventional SiO2 grown at 1000 oC cannot be used. In this work we show that an organic molecule, 1,10-Phenanthrenequinone (PQ), deposited at room temperature, can electronically passivate the surface nearly as well as the best SiO2. MOSFETs, which depend critically on the absence of surface states, were made with PQ on the silicon surface, followed by an organic resin gate dielectric. The electron mobilities are similar to conventional devices [1] and are stable for at least six months [2]. • S. Avasthi, Y. Qi, G. Vertelov, J. Schwartz, A. Kahn, and J. Sturm, Applied Physics Letters, accepted, April 2010. • S. Avasthi, G. Vertelov, Y. Qi, A. Kahn, J. Schwartz, and J. Sturm, Symp. Mat. Res Soc., Dec. 2009 (best student poster award). Schematic of PQ-Silicon bonding MOSFET structure and characteristics (PQ on Si, then organic resin gate dielectric at 100 oC). Electron mobility = 640 cm2/Vs