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Marco Rolandi, Itai Suez, Hongjie Dai, Jean M. J. Frechet U C Berkeley , L.B.L. and Stanford

Dendrimer M onolayers A s N egative & P ositive T one R esists F or S canning P robe L ithography. Marco Rolandi, Itai Suez, Hongjie Dai, Jean M. J. Frechet U C Berkeley , L.B.L. and Stanford NANO LETTERS . 2004 V ol. 4, No. 5 889-893. Presented by Liang Pan.

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Marco Rolandi, Itai Suez, Hongjie Dai, Jean M. J. Frechet U C Berkeley , L.B.L. and Stanford

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  1. Dendrimer Monolayers As Negative &Positive Tone Resists For Scanning Probe Lithography Marco Rolandi, Itai Suez, Hongjie Dai, Jean M. J. Frechet UCBerkeley, L.B.L. and Stanford NANOLETTERS. 2004Vol. 4, No. 5889-893 Presented by Liang Pan

  2. Many things need to be improved including resists

  3. Limitation of Conventional Resist for sub-10nm resolution • Chemical amplification help to increase the sensitivity (need fewer photons to initiate reaction), but resolution of most of conventional PR is limited by diffusion process of radical reactions. Example*: Deprotection scheme. This PR was used for DRAMs fabrications in IBM. * IBM J of R&D. Volume 41, Numbers 1/2, 1997Optical lithography

  4. Monolayer by self-assembly Light-harvesting structure* New Scheme using Monolayer Resist • Monolayer resist by self-assembly techniques. • Provides nanometer thick and uniform resist layer over large area • Good etching resistance • Photon/Electron harvesting structure • Greatly increases sensitivity without diffusion process * M. Oar et al. Chem. Mater. 2006, 18, 3682-3692

  5. Dendrimer Molecules It takes about 30 minutes for the self-assembly process to finish in solution Dendrimer Monolayers Structures* Antenna Anchor * M. Rolandi et al. NANOLETTERS. 2004Vol. 4, No. 5889-893

  6. SPL ProcessUsing (not limited by) AFM * M. Rolandi et al. NANOLETTERS. 2004Vol. 4, No. 5889-893

  7. Positive Tone Negative Tone Lithography Results * M. Rolandi et al. NANOLETTERS. 2004Vol. 4, No. 5889-893

  8. Related Works* about Self-Assembly Patterns • In another work, they broke down some bonds using AFM, and then selectively assembled different end-groups to do self-assembly lithography. * S. Backer et al. Langmuir 2007, 23, 2297-2299

  9. Assembly Results • After exposing to end-groups solution for 12~24 h in a dry nitrogen environment, etching masks were generated by self-assembly. * S. Backer et al. Langmuir 2007, 23, 2297-2299

  10. Summary • The authors have devised new scanning probelithography schemes based on a self-assembled monolayer resists. • They demonstrated formation of both negative and positive tone pattern transfer. • Currently, only 20nm resolutions were demonstrated due to the limitation of AFM tips sharpness. • They claimed that dendrimer resists is possibleto push lithographic resolution to a few nanometers.

  11. Thank you!Questions?

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