The Continued Evolution of Re-Configurable FPGAs for Aerospace and Defense Strategic Applications

1. The Continued Evolution of Re-Configurable FPGAs for Aerospace and Defense Strategic Applications Howard Bogrow

2. Abstract Present and future aerospace and defense applications continue to demand ever increasing performance, density, and above all flexibility from FPGAs. The Virtex families of re-configurable FPGAs provide the technology to meet these demands. Various members of these families are currently available in both COTs and SMD formats, as well as in radiation tolerant versions. Xilinx is also fully supporting a recently announced software tool that automates the implementation of TMR (Triple Modular Redundancy) into members of these FPGA families for mission critical applications. Xilinx has received government funding towards the development of a Single Event Immune Re-configurable FPGA (SIRF) with possibly strategic performance. This paper will focus on Xilinx currently available Virtex solutions, while also discussing Xilinx's future development efforts. There will also be some discussion of the various manufacturing flows utilized by Xilinx to address the stringent requirements of current and future space missions, as well as the latest package developments.

3. Xilinx Long-Term Commitment to Aerospace & Defense 1st 90nm Virtex-4 Platform FPGA Rad tolerant Virtex-II Pro 04 Xilinx on Mars 1st 130nm Virtex-II Pro SEE Consortium formed 02 1st 150nm Virtex-II Platform FPGA Rad tolerant Virtex & SPROMs 00 98 Virtex million-gate FPGAs 1st rad tolerant devices 1st 0.35 & 0.25mm FPGAs QML & ISO9001 certifications 97 95 ISO 9002 certification 91 1st Standard Military Drawing (SMD) released 89 1st device qualified to MIL-STD-883 85 Introduced 1st field programmable gate array (FPGA) 84 Xilinx Founded 1985 1990 1995 2000 2005 Source: Company reports

4. 1 year Technology Leadership First to 300 mm First to 90 nm Xilinx Technology Roadmap 180 nm Virtex-E Extended Memory • Leading SIA Roadmap • 150nm, 130nm and90nm • 300mm wafers starting with Virtex-II and Virtex-E • First 90nm Spartan-3 family in full production • First Virtex-4 devices now shipping 150 nm Virtex-II SIA Roadmap 130 nm Virtex-IIPRO Virtex-4 90 nm Spartan-3 65 nm 45 nm 1999 2000 2001 2002 2003 2004 2005

5. Aerospace and DefenseVirtex Mil Spec Products 65nm Next Generation Virtex-4 90nm Mil-Temp Space Grades Virtex-IIPRO 130nm Mil-Temp Space Grades Virtex-II 150nm Mil-Temp Space Grades 180nm Rad Tolerant 220nm “Rad by Design” Program 2003 2004 2005 2006

6. RadHard By Design Program Virtex-II Virtex-II Pro Virtex-4 Virtex-II Virtex-II Pro Virtex-4 Aerospace and Defense QualificationsClosing the Gap with Commercial Years from Commercial Production Qualification 4 XC3000 XQ4000XL XC4000 XC4000E XQ4000EX Virtex 3 Virtex-E XQ4000XL Virtex Virtex-E 2 Military Qualification 1 Space Qualification Program Goals FPGA Family Generations

7. Virtex-4 ASMBL™ ColumnarArchitecture • Virtex 4th Generation advanced FPGA architecture • Enables “dial-In” resource allocation mix • Logic, DSP, BRAM, I/O, MGT,DCM, PowerPC • Enabled by Flip-Chippackaging technology • I/O columns distributed throughout the device

8. Three Virtex-4 Platforms LX FX SX Resource 23-55K LCs 14-200K LCs 12-140K LCs Logic Memory DCMs DSP Slices SelectIO RocketIO PowerPC Ethernet MAC 2.3-5.7Mb 0.9-6Mb 0.6-10Mb 4-12 4-8 4-20 128-512 32-96 32-192 320-640 240-896 240-960 N/A N/A 0-24 Channels N/A N/A 1 or 2 Cores N/A N/A 2 or 4 Cores DSP Density Processor Cores

9. Drain Metal Connection Source Metal Connection Gate Channel Source Drain Process Technology Advances • Advanced 90-nm process • 11-Layer metallization • 10 copper + 1 aluminum • New Triple-Oxide Structures • Lower quiescent power consumption • Benefits: • Best cost • Highest performance • Lowest power • Highest density • Over 1 million 90 nm FPGAs shipped

10. Dramatic Power Reduction in Virtex-4 • Challenges • Static power grows with process generations • Transistor leakage current • Dynamic power grows with frequency • P = cv2f Power Consumption 130 nm FPGAs Virtex-4 cuts power by 50% • Measured 40% lower static power with Triple-Oxide technology 50% • 50% lower dynamic power with 90-nm • Lower core voltage • Less capacitance • Up to 10x lower dynamic power with hard IP • Integration means fewer transistors per function Frequency

11. TCK TDO TDI TMS DOUT_BUSY D[7:0] DIN MODE[2:0] PROG_B DONE RDWR_B CS_B INIT CCLK Virtex-4 Configuration Features • Higher configuration speed • 100MHz Serial & Parallel interface • 66MHz JTAG interface • CCLK available to users • 256 bit AES security • Configuration ECC • ICAP and DRP support • Dedicated configuration I/O bank • Enhanced partial reconfiguration • Compatible with previous FPGAs • Supports earlier configuration modes

12. FPGA Radiation ToleranceTID Trends vs Product/Technology • 350nm - XQ4000XL • 60 krad (Si) • 220nm - XQVR (Virtex) • 100 krad (Si) • 150nm - XQR2V (Virtex-II) • 200 krad (Si) • 130nm – XQR2VP • 250 krad (Si) • 90nm (Preliminary) • 300 krad (Si) • Process trends*: • Gate oxide continues to thin • Oxide tunnel currents increase • Gate stress voltage decreases *See “CMOS SCALING, DESIGN PRINCIPLES and HARDENING-BY- DESIGN METHODOLOGIES” by Ron Lacoe, Aerospace Corp 2003 IEEE NSREC Short Course 2003

13. V-4 V-4 V-4 SEE Consortium Platform FPGA Test Phases • Parallel Test Approach to accelerate product qualification • 3 SEE Consortium Tiger Teams: Fabric, Processor, Serial Transceiver Dynamic(2Q05) Mitigation (3Q05) Special Solutions Static (1Q05) V-2pro FPGA Fabric and Static Cells V-2pro PowerPC Processor & IP V-2pro Multi-Gigabit Serial Transceivers

14. Dose Rate Testing • Current Test Program • XC2VP40 • Work is funded by MDA • Testing is being done by a consortium consisting of AFRL, Crane, Xilinx and Raytheon • Initial tests were run July 2004 at Navsea Crane using 60 MeV electron beam source utilized commercial Virtex-IIpro performance board and commercial V-IIpro parts • Tests to compare RH (epi) performed in November 2004 at Navsea Crane • No upset until > 3.0E8 • RH (epi) no POR until >1.0E9 • No Latch-up through >1.0E10 • Historical Testing • XC4036XL • Testing was done by Lockheed • Testing range of 1.0E7 to 4.0E11 (20 nsec pulse) tested • No data upset >1.3E9 to >3.0E9 • No latch-up beyond 4.0E11 • XCVR300E • Testing done by ITT (MRC) • Testing range of 6.3E7 to 3.0E9 • No upset until > 4.0E8 (non-epi) to >1.0E9 (epi) • No latch-up beyond 3.0E9

15. TMRTool • Software development tool to automatically implement TMR customer designs optimized for Xilinx FPGAs • Result of Xilinx/Sandia National Labs partnership • Released to Production in Sept 2004 • Support all design entry methods and HLLs • NGO & NGC based input • EDIF based output • OS Support • Windows 2000/XP GUI Support • Windows/UNIX PERL Command Line Support • Supports ISE 5.2i, 6.1i, 6.2i

16. TMRTool Netlist Flow Xilinx Design Flow

17. RadHard by Design Program SEU Immune Reconfigurable FPGA (SIRF) Configuration Memory Control Logic Logic Fabric DSP Fabric Block Memory Clocking & Clock Mgmt RocketIO™Multi-Gigabit Transceiver SelectIO PowerPC™ Virtex-4Silicon Floorplan Phase-1: Design Feasibility, Test Chip Phase-2: Chip Development Phase-2A: Advanced Features

18. SIRF Radiation Goals

19. Advanced Packaging • CG717 • 35 x 35mm body, 1.27mm pitch, cavity-up • Footprint compatible with the BG728 • Developed for the 2V3000 • Wire Bond, gold • Au-Sn lid (hermetically sealed) • CF1144 • 35 x 35mm body, 1.00mm pitch • Footprint compatible with the FF1152 • Developed for the 2V6000 • Flipchip with high lead balls, MSL1

20. Enhanced Flow – In Development

21. Summary • Virtex-4 architecture and design methodology enables rapid development of Platform-specific FPGAs with embedded cores • Advances in 90nm chip design resulted in optimized performance, lower power, and first-silicon success of Virtex-4 • SEE Consortium primary vehicle for radiation characterization testing (US and European) • Rad Tolerant program will continue with concurrent phase-in of Rad Hard by Design program • Advanced packaging and enhanced process flows integral part of overall development efforts