1 / 25

EFE1 Power semiconductors

EFE1 Power semiconductors. Mohan chap. 2 T-484 chap. 10 J.Nybo 14.02.05 Rev. 16.02.05. Diodes. Recovery time. Diode types. Schottky: Vf = 0.4- 0.6V, Vr = 50-100V Fast- recovery: Vr: in 100’s V, If: in 100’sA Line-frequency: Vf: 0.8-1.0V, Vr: in KV, If: in KA. Overview.

raine
Download Presentation

EFE1 Power semiconductors

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. EFE1Power semiconductors Mohan chap. 2 T-484 chap. 10 J.Nybo 14.02.05 Rev. 16.02.05

  2. Diodes Recovery time

  3. Diode types • Schottky: Vf = 0.4- 0.6V, Vr = 50-100V • Fast- recovery: Vr: in 100’s V, If: in 100’sA • Line-frequency: Vf: 0.8-1.0V, Vr: in KV, If: in KA

  4. Overview

  5. Desired switch characteristics

  6. Bipolar junction transistors

  7. Darlington gain

  8. Storage delay

  9. Metal Oxide Semiconductor (MOSFET) Possitive R-on temp. coefficients, makes it easy to parallel MOSFET’s

  10. Current rise time Millercapacitor

  11. Voltage rise time

  12. Driver power

  13. Insulated Gate Bipolar Transistor (IGBT)

  14. IGBT characteristics

More Related