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Semiconductor Process Techniques: Wet and Dry Etching, Diffusion Process

Learn the steps for a typical wet and dry etching process as well as a diffusion process in semiconductor manufacturing. From preparing chemicals to loading wafers and controlling furnace temperatures, follow these precise instructions for successful semiconductor fabrication.

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Semiconductor Process Techniques: Wet and Dry Etching, Diffusion Process

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  1. Laboratory: A Typical Wet Etching Process

  2. - Prepare chemicals.

  3. - Mix chemicals in the proper ratios.

  4. - Heat chemical mixture.

  5. - Etch wafer.

  6. - Remove wafer from the chemical etch solution.

  7. - Rinse wafer.

  8. A Typical Dry Etching Process

  9. - Prepare chamber.

  10. - Load wafers.

  11. -Plasma etch.

  12. - Remove wafers.

  13. A Typical Diffusion Process

  14. - Prepare the source wafers (e.g., ceramic wafers of LnP5O14 , which is a mixture of Ln2O3 and P2O5, as a source of P2O5 for P-doping).

  15. - Verify that the diffusion furnace temperature is set (~ 850 °C for P ).

  16. - Using teflon or teflon-tipped tweezers, carefully load the wafers into the quartz boat.

  17. - The wafers should be inserted such that the device side of each is facing an P2O5 source wafer. There are two wafer slots between sources, allowing for a device wafer facing both sides.

  18. - Return quartz boat, which now contains the wafers and sources, to the phosphorus furnace using the quartz boat loader.

  19. - The phosphorus furnace needs to be heated to the temperature (~850 °C for P-doping) at which the diffusion will be performed.

  20. - Begin nitrogen flow through the tube by setting the gas flow rate to a reasonable value (~3000 sccm).

  21. - At the end of the process remove the boat from the furnace and allow the wafers to continue to cool before removing them from the wafer carrier.

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