1 / 21

Laboratory: A Typical Wet Etching Process

Laboratory: A Typical Wet Etching Process. - Prepare chemicals. - Mix chemicals in the proper ratios. - Heat chemical mixture. - Etch wafer. - Remove wafer from the chemical etch solution. - Rinse wafer. A Typical Dry Etching Process. - Prepare chamber. - Load wafers. -Plasma etch.

rdang
Download Presentation

Laboratory: A Typical Wet Etching Process

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. Laboratory: A Typical Wet Etching Process

  2. - Prepare chemicals.

  3. - Mix chemicals in the proper ratios.

  4. - Heat chemical mixture.

  5. - Etch wafer.

  6. - Remove wafer from the chemical etch solution.

  7. - Rinse wafer.

  8. A Typical Dry Etching Process

  9. - Prepare chamber.

  10. - Load wafers.

  11. -Plasma etch.

  12. - Remove wafers.

  13. A Typical Diffusion Process

  14. - Prepare the source wafers (e.g., ceramic wafers of LnP5O14 , which is a mixture of Ln2O3 and P2O5, as a source of P2O5 for P-doping).

  15. - Verify that the diffusion furnace temperature is set (~ 850 °C for P ).

  16. - Using teflon or teflon-tipped tweezers, carefully load the wafers into the quartz boat.

  17. - The wafers should be inserted such that the device side of each is facing an P2O5 source wafer. There are two wafer slots between sources, allowing for a device wafer facing both sides.

  18. - Return quartz boat, which now contains the wafers and sources, to the phosphorus furnace using the quartz boat loader.

  19. - The phosphorus furnace needs to be heated to the temperature (~850 °C for P-doping) at which the diffusion will be performed.

  20. - Begin nitrogen flow through the tube by setting the gas flow rate to a reasonable value (~3000 sccm).

  21. - At the end of the process remove the boat from the furnace and allow the wafers to continue to cool before removing them from the wafer carrier.

More Related