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Thin Film Analysis by Ion Beam Techniques W. Hong, G. D. Kim, H. J. Woo, H. W. Choi and J. K. Kim

Thin Film Analysis by Ion Beam Techniques W. Hong, G. D. Kim, H. J. Woo, H. W. Choi and J. K. Kim. Characteristics of MeV Ion Beam Analysis. Nondestructive Absolute, quantitative High sensitivity Depth profiling in the first micron Light element detection (ERDA, NRA, PIGE)

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Thin Film Analysis by Ion Beam Techniques W. Hong, G. D. Kim, H. J. Woo, H. W. Choi and J. K. Kim

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  1. Thin Film Analysis by Ion Beam Techniques W. Hong, G. D. Kim, H. J. Woo, H. W. Choi and J. K. Kim

  2. Characteristics of MeV Ion Beam Analysis • Nondestructive • Absolute, quantitative • High sensitivity • Depth profiling in the first micron • Light element detection (ERDA, NRA, PIGE) • Ultra high sensitive isotope measurement • Versatile • External Beam available

  3. RBS vs TOF-ERDA

  4. Tandem Accelerator in KIGAM

  5. Multipurpose chamber for RBS & TOF-ERD

  6. Rutherford Backscattering Spectrometry (RBS) • Semiconductors • Superconductors • Optical films • Material science

  7. TOF-ERDA BN on Si

  8. Electrolytic Li-Ni-V-O(H)/Si (1000 A) RBS result TOF-ERD result

  9. Thick 600  1015 atoms/ cm2 (22.56 mg/cm2, ~ 440 A) Element Areal density Atomic ratio Areal density Mass ratio (1015 atoms/ cm2)(%) (mg/cm2) (%) H 69.3 11.5 0.12 0.51 Li 112.6 18.8 1.30 5.75 O 259.7 43.3 6.90 30.59 Ar 2.6 0.43 0.17 0.76 V 86.6 14.4 7.32 32.46 Ni 69.3 11.5 6.75 29.92

  10. Electrolytic Si-P-N-O-Li on Si (2000 A) RBS result TOF-ERD result

  11. Thick 3500  1015 atoms/ cm2 (87.59 mg/cm2, ~ 1600 A) Element Areal density Atomic ratio Areal density Mass ratio (1015 atoms/ cm2)(%) (mg/cm2) (%) H 55.8 1.6 0.09 0.11 Li 1283.6 36.7 14.80 16.89 C 27.9 0.8 0.56 0.64 N 725.68 20.7 16.88 19.27 O 725.68 20.7 19.28 22.01 Si 117.22 3.4 5.47 6.24 P 558.21 16.0 28.71 32.77 Pt 5.58 0.2 1.81 2.06

  12. Active layer of TFT and PDP display Ru on Si (300 A) RBS result TOF-ERD result

  13. Thick 270  1015 atoms/ cm2 (42.27 mg/cm2, ~ 340 A) Element Areal density Atomic ratio Areal density Mass ratio (1015 atoms/ cm2)(%) (mg/cm2) (%) H 5.0 1.9 0.01 0.02 C 15.0 5.6 0.30 0.71 Ru 250.0 92.6 41.96 99.27

  14. Dielectric layer of semiconductor Ru - O on Si (300 A) RBS result TOF-ERD result

  15. Layer 1 • Thick 50  1015 atoms/ cm2 (3.37 mg/cm2 , ~ 30 A) • Element Areal density Atomic ratio Mass density Mass ratio • (1015 atoms/ cm2) (%) (mg/cm2) (%) • H 17.9 35.7 0.03 0.88 • C 5.4 10.7 0.11 3.17 • O 8.9 17.9 0.24 7.04 • Ru 17.9 35.7 3.37 88.91 • Layer 2 • Thick 150  1015 atoms/ cm2 (19.22 mg/cm2 , ~ 160 A) • Element Areal density Atomic ratio Mass density Mass ratio • (1015 atoms/ cm2)(%) (mg/cm2) (%) • H 2.2 1.5 0.00 0.02 • C 27.4 18.3 0.55 2.84 • O 11.0 7.3 0.29 1.51 • Ru 109.5 73.0 18.38 95.63

  16. Neutron generation target Ti-3H on Cu, 3H(p,n)3He TOF-ERD result (film composition) RBS result (before H irradiation)

  17. Temperature variation of target with H irradiation RBS result (after H irradiation)

  18. Cal. by neutron cross section Before irradiation After irradiation Maker data Areal density of Ti (atom/cm2) 1.4 x 1019 1.3 x 1019 1.28 x 1019 2.5-3.8 x 1018 Areal density of 3H (atom/cm2) 4.6 x 1018 3.8 x 1019 4.8 x 1018

  19. Conclusion • RBS and TOF-ERD are mutually assistant in analysis from light elements • to heavy elements • Electrolytic films in which composition of light elements is important were • analyzed • It was found that Ru film can be a good dielectric film by introducing • small amount of oxygen • Nitrogen and oxygen were observed in a titanium tritide target and • the results reduced error of neutron cross section measurement • Cu migration during proton irradiation was also observed by RBS • measurement in spite of cooling by freon circulation • Ion beam analysis techniques are very successfully applied to • many fields of thin film studies

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