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Introduction

Introduction. The indium-tin-oxide [ITO(80 nm)] and Ni(5 nm)–Au(10 nm) films were separately deposited on glass substrates,p-GaN layers, n+- InGaN–GaN short-period- superlattice (SPS) structures, and nitride-based light-emitting diodes (LEDs).

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Introduction

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  1. Introduction The indium-tin-oxide [ITO(80 nm)] and Ni(5 nm)–Au(10 nm) films were separately deposited on glass substrates,p-GaN layers, n+-InGaN–GaN short-period-superlattice (SPS) structures, and nitride-based light-emitting diodes (LEDs). It was found that ITO on n+-SPS structure could provide us an extremely high transparency (i.e., 93.2% at 465 nm) and also areasonably small specific contact resistance of 1.6*10 -3 cm2Ω.

  2. Structure Ti/Au/Ti/Au ITO (80nm) orNi(5nm)/Au(10nm) SPS: Si-doped n+ In0.23Ga0.77N -GaN (5/5Å) Mg-doped p-type GaN (0.25um) Mg-doped Al0.15Ga0.85N (50nm) Ti/Au/Ti/Au MQW*5 period Well: In0.23Ga0.77N (3nm) Barry:GaN (7nm) Si-doped n-GaN (2um) Nucleation GaN (30nm) Sapphire Chip Size:350*350 um2 deposited on nitride-based LED

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