JSC “ELEKTROVIPRYAMITEL”

1. JSC “ELEKTROVIPRYAMITEL” Evgeny Geifman General director, doctor of technical sciences, professor Moscow, 2019

2. Introduction • JSC Scientific Production Company "Electrovipryamitel“ (EV)was created in 2005 on the basis of a huge factory "Electrovipryamitel" - Russia's largest manufacturer of power silicon based semiconductor devices and systems. EV establishment was also supported by leading experts of scientific centers of Russia and the Government of the Republic of Mordovia (Russia). • The main activity of EV is the development and manufacture of epitaxial silicon carbide substrates, as well as a new generation of semiconductor devices based on them. 430001, Russia, Republick of Mordovia, Saransk, Proletarskaya str. 126

3. Team • EV’s team is a division specialized on the development & production of SiC epi-wafers. • During the last 2012-2014 the technology of SiC epitaxy was developed and improved to achieve desired requirements. • In 2013 EV’s specialists get technological trainings at Ascatron, Swedish SiC epitaxy company. • Currently the team of EV aims to improve the quality of SiC epi-wafers by introduction of new technologies and equipment.

4. Epitaxy • EV successfully implemented federal work "Development of the basic technology of silicon carbide wafers for the production of electronic components." Within this work EV’s first SiC structures were designed, produced and prepared for further production start. Epitaxy is being performed on a modern installation VP508GFR by Aixtron (Germany).

5. Analytical equipment To analyze the quality of the grown SiC epi-substrates the laboratory includes following equipment: Surface roughness measurement of epitaxial layers - Profilometer P16+ Dopant concentration measurement - mercury probe based unit CV Map 92A Installation for crystallographic perfection control of epitaxial layers - X-ray diffractometer Rigaku Smart Lab Thickness measurements of the epitaxial layer - FTIR spectrometer Nicolet 6700 Surface defects inspection - direct microscopy with image analysis system Nikon LVD 100D

6. SiC Epiwafers

7. Doping measurements Typical map for doping measurements Modes: Generator frequency: 10 kHz. Voltage: 0 – 24,5 V. The measurement result of average concentration of the epitaxial structure and the map of concentration of the epitaxial layer

8. Thickness measurements Typical points at which the thickness is measured Typical results Thickness - Minimum 9.94 um Thickness - Maximum 10.01 um Thickness - Average 9.98 um Thickness StdDev - 0.25%

9. Roughness measurements Currently EV considers purchasing of equipment for chemically-mechanical polishing, to achieve a surface roughness of epiwafers in the range of 0.2-0.3 nm.

10. Diffraction measurements Measurement points of diffraction peak (0008) for SiC epitaxial layer Typical measured peak for SiC epi-layer

11. Comparisons

12. EV’s wafers atGPT

14. Cooperation with GPT Russia EV GPT Possible production of epi-wafers for GPT Possibility to provide end-diodes to the Russian market using GPT PROCESSING SERVICE China The use of SiC devices increasingly grows worldwide, so EV is aiming to consider all possible forms of cooperation with GPT. EV is ready to improve its epitaxy and the quality and develop epi-wafers for different types of SiC diodes. After the upgrade of EV’s AIXTRON unit, EV will be able to perform R&D and production regarding epi-wafers for the SiC transistors.

15. JSC “ELEKTROVIPRYAMITEL” Thank you! Saransk Moscow Beijing