Global GaN Power Device Market Executive Summary, Introduction, Sizing, Analysis And Forecast To 2025

1. Global GaN Power Device Market Executive Summary, Introduction, Sizing, Analysis And Forecast To 2025 Market Overview Gallium nitride (GaN) is used in production of semiconductor power devices and Radio-Frequency (RF) components and light emitting diodes (LEDs). GaN powered devices have proved efficient than silicon semiconductors in power conversion, RF, and analog applications. GaN conducts electrons over 1000 times more efficiently than silicon. Moreover, the manufacturing cost of GaN devices is lower than silicon, since GaN devices are produced using standard silicon manufacturing procedures in the same factories that currently produce conventional silicon semiconductors. The devices are much smaller for the same functional performance and can be produced per wafer. GaN is lower on resistance giving lower conductance losses. The devices powered by GaN are faster that yield less switching losses and less capacitance results in less losses when charging and discharging devices. Moreover, GaN devices need less power to drive the circuit and require less space on the printed circuit board. These significant benefits of GaN over other alternatives such as silicon transistors are expected to fuel the overall growth of the GaN power device market. This report provides in-depth analysis of GaN power devices, market size (US$ Million), and Cumulative Annual Growth Rate (CAGR %) for the forecast period (2017– 2025), considering 2016 as the base year Request Sample Copy of this Report @ https://www.coherentmarketinsights.com/insight/request-sample/1221 Market Dynamics GaN materials include a wide range of features such as wide energy band gap (3.4eV), high heat capacity, thermal conductivity, low device resistance, and ability to operate at transition speeds from on to off and vice versa, are among the prominent benefits, inadvertently driving growth of the GaN power devices market. High conductivity in On state in comparison to alternatives such as silicon substitutes present high opportunity to improve the energy efficiency in power distribution and control systems. However, limited availability and relatively high cost of the material is expected to hinder the overall growth of the market in the near future. Detailed Segmentation: •Global GaN Power Devices Market, By Device Type: •Power Device •RF Power Device •Global GaN Power Devices Market, By Voltage Range: •<200 Volt •200 – 600 Volt •>600 Volt •Global GaN Power Devices Market, By End User: •Power Drives •Supply and Inverter •Radio Frequency •Global GaN Power Devices Market, By Vertical: •Telecommunications •Industrial •Automotive

2. •Renewables •Consumer and Enterprise •Military, Defense, and Aerospace •Medical Request For Customization @ https://www.coherentmarketinsights.com/insight/request- customization/1221 Some of the key players in the GaN power devices market are Cree Inc., Efficient Power Conversion (EPC) Corporation, Infineon Technologies, GaN Systems Inc., Macom, Microsemi Corporation, Mitsubishi Electric Corporation, Navitas Semiconductor, Qorvo, Inc., and Toshiba Electronic Devices & Storage Corporation. About Coherent Market Insights: Coherent Market Insights is a prominent market research and consulting firm offering action-ready syndicated research reports, custom market analysis, consulting services, and competitive analysis through various recommendations related to emerging market trends, technologies, and potential absolute dollar opportunity. Contact Us: Mr. Shah Coherent Market Insights 1001 4th Ave, #3200 Seattle, WA 98154 Tel: +1-206-701-6702 Email: sales@coherentmarketinsights.com