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FIG. 3. The simulated conduction and valence band diagrams (upper row),

electron ： 1.23 × 10 19 cm -3 hole ： 2.4 × 10 18 cm -3. electron ： 1.85 × 10 19 cm -3 hole ： 8 × 10 17 cm -3. A2. B2. FIG. 3. The simulated conduction and valence band diagrams (upper row), electron and hole concentration (middle row), and radiative recombination rate

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FIG. 3. The simulated conduction and valence band diagrams (upper row),

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  1. electron ： 1.23 × 1019 cm-3 hole ： 2.4 × 1018cm-3 electron ： 1.85 × 1019 cm-3 hole ： 8 × 1017cm-3 A2 B2 FIG. 3. The simulated conduction and valence band diagrams (upper row), electron and hole concentration (middle row), and radiative recombination rate (lower row) at 2 A/cm2 for the LEDs (a) with 2 nm GaN cap and (b) with 2 nm In 0.04 Al 0.3 Ga 0.66 N cap;

  2. 61% 54% B1 B2 B0 B3 1.6 10 (c) the simulated internal quantum efficiency (IQE) as a function of current density.

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