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Iván Vila Álvarez Instituto de Física de Cantabria (CSIC-UC )

Overview on New Technologies in Silicon Detectors 20th International Workshop on Vertex Detectors June 20 th Rust, Austria. Iván Vila Álvarez Instituto de Física de Cantabria (CSIC-UC ). Scope and Caveat.

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Iván Vila Álvarez Instituto de Física de Cantabria (CSIC-UC )

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  1. Overview on New Technologies in Silicon Detectors20th International Workshop on Vertex DetectorsJune 20th Rust, Austria Iván Vila Álvarez • Instituto de Física de Cantabria (CSIC-UC)

  2. Scope and Caveat • Focus on technologies proposed for the new generation of HEP pixel/tracker systems. • Too broad topic for a comprehensive & detailed report. • Even current hot topics, like SiPM, outside the talk’s scope. • Detailed reports on dedicated talks (see agenda): sensors material and technologies, FEE-sensor interconnection, low mass supports, cooling, monitoring, local triggering, fast r/o links, industrialization, etc. • Thank you to the too long list of people from which I grab all the nice pictures and plots. I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  3. Outline • R&D Targets and trends. • New (evolved) sensor concepts: monolithic, semi-monolithic , hybrid and approaches. • New hybridization: SoI& 3D-IC • Module and detector system engineering. • Power distribution systems. • Ultra light mechanics • Structual& environmental monitoring. • Summary I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  4. The colliding Future ? STAR • Bunch of projected EPP experiments driven the mainstream R&D lines. HL-LHC • Low mass, high precision vs. Rad. Resistance High granularity…. not quite app. beyond TRK/VTX. I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  5. R&D Trends I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  6. Back to the future: Evolved hybrids • During LHC’s LS1 shutdown a forth extra layer to be installed (IBL) (R ~ 33mm) • Ionizing dose > 250 MRads • NIEL dose: 5x1015 neqv cm-2 • Two (Three) competing hybrid technologies CiS CNM FBK I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  7. 3D IBL Qualification Devices (FE-I4) • Sensor produced at CNM • UBM and flip-chip at IZM (Germany) • Mounted in Bonn and Genova 20 V 120 V 5 x 1015 nequiv cm-2 I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  8. 3D IBL QualificationDevices (FE-I4) • Good threshold and noise uniformity and CCE • Irradiated 3D-FE-I4 devices currently at SPS test beam. I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  9. 3D sensorsforLHCb’s VELO upgrade • Other advantages: faster, reduced charge sharing to neighboring pixels, slim active edges. • Drawbacks: inefficient volume due to column electrodes, much complex processing. • 3D bumpbondedto Medipix2 and TimePix ROC. Single pixel efficiency 120 GeVpions normal incidence 2011 JINST 6 P05002 I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  10. 3D sensors vs. Planar 3D Single pixel scanwithmicrofocus (~5um) monocromatic X raysource. PLANAR ratio of multiple hits/ single hit distribution in the single pixel area. I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  11. Semi-monolithicsensors: DEPFET • Implanted transistor on a fully depleted bulk. • Integration of the first amplification stage. • Selected solution for Belle II vertex & proposal for ILD vertex. I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  12. Semi-monolithicsensors: DEPFET • Fully depleted sensitive volume (large signals) • r/o cap. independent of sensor thickness (reduce noise) • Internal amplification • charge-to-current conversion • Large signal, even for thin devices. • Further signal amp. and processing outside the active area (no need for bump bonded atop electronics). • Charge collection in "off" state. • r/o on demand (potentially low power device) • only few rows active  low power consumption • Frame based pixel matrix R/O, rolling shutter mode I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  13. ILC DEPFET prototype I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  14. 2010 SPS Test beamresults I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  15. Monolithicpixels: MAPS for STAR • Fully based on industrial CMOS technology • On each pixel a CMOS low noise amplifier. • n-well/p-epidiode  incomplete depletion • Charge collection by diffusion (small signal) • Thinning (50um) standard procedure. I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  16. MAPS: Tackling two main limitations • CMOS industry provides a highly resistive epitaxial layer  Increase depletion deep  better SNR and radiation resistivity. • MIMOSA 26 (EUDET’s telescope) I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  17. MAPS future trends. • MAPS pixels in Standard CMOS HV technology I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  18. Monolithic “hybrid” sensors: SOI • Full CMOS circuitry connected to a highly resistive and fully depleted substrate through silicon vias. • CMOS device layer and high resistive substrate isolated by a buried oxide layer (BOX) I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  19. MONOLITHIC HYBRID DEVICES: 3D-IC • Ingredients: Thin dyes (TIERS) + high density interconnects + vias. height Ziptronix diameter Typically 2 mm – 30 mm pitch 0.5 mm potential Height/diameter ~ 10:1 I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  20. No pixelated 2D sensors: microstripswith resistive electrodes S1 S2 Particle t t t2 t1 Ampl1 Ampl2 P4 V • Charge division used in wire chambers to determine the coordinate along the sensing wire. • Same concept with conventional microstrips with slightly resistive electrodes • Better than 30um in long. coocrdinate

  21. 2D strip sensors: radiactive source & 120 SPS Test beam.

  22. WRAPPING UP • More optimized (thinned, low mass reduced power consumption) hybrid pixel still rule the hadronic realm. • New generation of precision experiments will use the next sensor technologies: CMOS; DEPFET • In medium/ large time scale, SOI and ·3D-IC may become a mainstream industry technology (impact on HEP?) • Apologies, many technologies –in some cases perfectly suited for dedicate experiment- left aside: Diamond, FPCCD, CiD, … I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  23. SYSTEM-WISE R&D:POWERING • Motivations: • LHC detectors upgrade: more granularity  more power BUT same cables for power distribution and space constrains. • e+e- experiments (ILC, SKEK): ultralightvtx/trackers can not afford bulky cooling systems  pulsed powering • Two strategies: serial powering vs. local DC-DC converters. • many issues to be addressed I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  24. LOW MASS MECHANICS:self-supportingsensors I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  25. Mechanics: new materials • PLUME Collaboration: SiC Foam I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  26. Fiber Optical Sensors for Structural &Environmental Monitoring I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  27. Fiber Optical Sensors for Structural &Environmental Monitoring • Application case: relative position monitoring of PXD and SVD Belle-II pixel sub-systems. • Extremely radiation rad technology Fluence 3x1015 pcm-2 Ion. dose 15 MGy !! zero degradation Irradiation I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  28. SUMMARY and… • Semiconductor based detectors are becoming more and more ubiquitous approaching the all-silicon detector concept. • Some of the here presented battle fronts aim to still extend their reach further. • The high precision and radiation resistance frontiers are approaching each other. Do hybrid and monolithic sensors converge on SOI or 3D-IC devices ? I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

  29. … a final remark I. Thou shalt minimize the cost II. Thou shalt stick to the budget limits. THANK YOU ! I.Vila, vila@ifca.unican.es - VERTEX2011, RUST June 20th

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