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Novel Family of Chiral-Based Topological Insulators: Elemental Tellurium under Strain*Luis Agapito1, Nicholas Kioussis1, William A. Goddard III, 2 and N. P. Ong31Dept. of Physics, California State University Northridge2Division of Chemistry and Chemical Engineering, California Institute of Technology3Department of Physics, Princeton University First-principles prediction that elemental Tellurium undergoes a trivial insulator to strong topological insulator (metal) transition under shear (hydrostatic or uniaxial) strain. The underlying mechanism: depopulation of lone-pair orbitals associated with the valence band via proper strain engineering. *The research was supported by NSF-PREM grant DMR-1205734.