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Analysis of Thermal Donor Generation in MCz-Silicon CZ Devices

This study explores thermal donor (TD) generation in n-type and p-type MCz-Si CZ devices, annealing effects, proton irradiation results, processing issues, and the impact of mask sets in Helsinki. Results show differences in TD generation based on passivation methods and irradiation. Presented at the RD50 seminar in Trento. More information available on the RD50 workshop website.

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Analysis of Thermal Donor Generation in MCz-Silicon CZ Devices

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  1. I-V/C-V results with p and n-type CZ devices *TD generation in MCz-si *Proton irradiation results *Annealing of MCz-Si *Processing issues *Mask sets in Helsinki J.Härkönen, RD50 seminar, Trento, 28.02-01.03.2005

  2. TD generation J.Härkönen, RD50 seminar, Trento, 28.02-01.03.2005

  3. Thermal Donor generation (Homogeneity) • We have not observed enhanced TD generation when the passivation was made by PECVD (Plasma Enhanced CVD) Si3N4 @3000C, which contains H2 10-30%. • See talk by Esa Tuovinen at 3rd RD50 Workshop • http://rd50.web.cern.ch/RD50/3rd-workshop/ J.Härkönen, RD50 seminar, Trento, 28.02-01.03.2005

  4. TD generation J.Härkönen, RD50 seminar, Trento, 28.02-01.03.2005

  5. 24 GeV/c irradiation J.Härkönen, RD50 seminar, Trento, 28.02-01.03.2005

  6. Annealing J.Härkönen, RD50 seminar, Trento, 28.02-01.03.2005

  7. Annealing J.Härkönen, RD50 seminar, Trento, 28.02-01.03.2005

  8. Mask sets in Helsinki AC-coupled strip detector -768 strips & 128 strips minis -p80m w20 m N-well pad detector J.Härkönen, RD50 seminar, Trento, 28.02-01.03.2005

  9. Higher Jleak in strips? J.Härkönen, RD50 seminar, Trento, 28.02-01.03.2005

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