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VDMOSFET (Vertical Double Diffused Metal Oxide Field Effect Transistor) power device

Rd. Source. 50V. Rg. Gate. Digital scope. Drain. 10V. The measurement circuit. Dependency of Oxide Thickness Effect on the Evolution of n-MOSFET Switching Time with Electrical Stress. C. SALAME 1 , R. HABCHI 1, 2 , B. NSOULI 3 , A. Khoury, and P. MIALHE 2.

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90656 jdeidet el mten - PowerPoint PPT Presentation

VDMOSFET (Vertical Double Diffused Metal Oxide Field Effect Transistor) power device