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High Doping Effects on In-situ and Ex-situ Ohmic Contacts to n-InGaAs

High Doping Effects on In-situ and Ex-situ Ohmic Contacts to n-InGaAs

High Doping Effects on In-situ and Ex-situ Ohmic Contacts to n-InGaAs. Ashish Baraskar*, Mark A. Wistey, Vibhor Jain, Uttam Singisetti, Greg Burek, Brian J. Thibeault, Arthur C. Gossard and Mark J. W. Rodwell ECE and Materials Departments, University of California, Santa Barbara Yong J. Lee

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532 views • 29 slides
High Doping Effects on in-situ Ohmic Contacts to n-InAs

High Doping Effects on in-situ Ohmic Contacts to n-InAs

High Doping Effects on in-situ Ohmic Contacts to n-InAs. Ashish Baraskar, Vibhor Jain, Uttam Singisetti, Brian Thibeault, Arthur Gossard and Mark J. W. Rodwell ECE, University of California, Santa Barbara, CA,USA Mark A. Wistey ECE, University of Notre Dame, IN, USA Yong J. Lee

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550 views • 28 slides
In-situ Ohmic Contacts to p-InGaAs

In-situ Ohmic Contacts to p-InGaAs

In-situ Ohmic Contacts to p-InGaAs. Ashish Baraskar, Vibhor Jain, Evan Lobisser, Brian Thibeault, Arthur Gossard and Mark Rodwell ECE and Materials Departments, University of California, Santa Barbara, CA Mark Wistey Electrical Engineering, University of Notre Dame, IN. Outline.

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784 views • 28 slides
In-situ Ohmic Contacts to p-InGaAs

In-situ Ohmic Contacts to p-InGaAs

In-situ Ohmic Contacts to p-InGaAs. Ashish Baraskar, Vibhor Jain, Evan Lobisser, Brian Thibeault, Arthur Gossard and Mark Rodwell ECE and Materials Departments, University of California, Santa Barbara, CA Mark Wistey Electrical Engineering, University of Notre Dame, IN. Outline.

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328 views • 28 slides
In-situ Iridium Refractory Ohmic Contacts to p-InGaAs

In-situ Iridium Refractory Ohmic Contacts to p-InGaAs

In-situ Iridium Refractory Ohmic Contacts to p-InGaAs. Ashish Baraskar, Vibhor Jain, Evan Lobisser, Brian Thibeault, Arthur Gossard, Mark J. W. Rodwell University of California, Santa Barbara, CA Mark Wistey University of Notre Dame, IN. Outline. Experimental details Contact formation

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527 views • 27 slides
Characterization of Contact Resistivity on InAs/GaSb Interface

Characterization of Contact Resistivity on InAs/GaSb Interface

Characterization of Contact Resistivity on InAs/GaSb Interface. Y. Dong , D. Scott, A.C. Gossard and M.J. Rodwell. Department of Electrical and Computer Engineering, University of California, Santa Barbara.

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365 views • 25 slides
Characterization of Contact Resistivity on InAs/GaSb Interface

Characterization of Contact Resistivity on InAs/GaSb Interface

Characterization of Contact Resistivity on InAs/GaSb Interface. Y. Dong , D. Scott, A.C. Gossard and M.J. Rodwell. Department of Electrical and Computer Engineering, University of California, Santa Barbara.

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277 views • 25 slides
Lower Limits To Specific Contact Resistivity

Lower Limits To Specific Contact Resistivity

Lower Limits To Specific Contact Resistivity. Depts. of 2 Materials and 3 ECE, University of California, Santa Barbara, CA. Ashish Baraskar 1 , Arthur C. Gossard 2,3 , Mark J. W. Rodwell 3 1 GLOBALFOUNDRIES, Yorktown Heights, NY.

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425 views • 16 slides
Lower Limits To Specific Contact Resistivity

Lower Limits To Specific Contact Resistivity

Lower Limits To Specific Contact Resistivity. Depts. of 2 Materials and 3 ECE, University of California, Santa Barbara, CA. Ashish Baraskar 1 , Arthur C. Gossard 2,3 , Mark J. W. Rodwell 3 1 GLOBALFOUNDRIES, Yorktown Heights, NY.

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171 views • 16 slides
Our Approach: Surface preparation by atomic hydrogen cleaning Increased doping

Our Approach: Surface preparation by atomic hydrogen cleaning Increased doping

Issue: InP HBTs need contact resistivity ( ? c ) < 2x10 ?8 ?-cm 2 for f t and f max >1 THz MJW Rodwell, Int. J. High Speed Electronics and Systems. 11,159 (2007); MJW Rodwell , CSIC (2008) ~10 ?8 ?-cm 2 ? c with in-situ contacts, but process flows often demand ex-situ contacts

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194 views • 3 slides

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