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Enpirion en5360 - PowerPoint PPT Presentation

Sachs et. al. IEEE Trans. Nuclear Science NS-31, 1249 (1984)

Threshold Shift vs Gate Oxide Thickness. Poly- Si Gate. SiO 2. Si. +. +. +. +. +. +. +. +. +. +. +. +. e --. e --. +. +. +. +. +. +. +. +. Tunneling Region. +. +. +. +. Hole removal process by tunneling in thin-oxide MOS Structures. Dosage = 150 Krads.

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Sachs et. al. IEEE Trans. Nuclear Science NS-31, 1249 (1984)