'Gan hemt' presentation slideshows

High Linearity and High Efficiency Power Amplifiers in GaN HEMT Technology

High Linearity and High Efficiency Power Amplifiers in GaN HEMT Technology. Shouxuan Xie Department of Electrical and Computer Engineering, University of California, Santa Barbara June 30, 2003. Outline. 1. Introduction and motivation - Why GaN HEMTs

1.89k views • 59 slides

High Electron Mobility Transistors

1.82k views • 23 slides

MURI, year started: 1998

Compact Power Supplies Based on Heterojunction Switching in Wide Band Gap Semiconductors Robert Davis, North Carolina State University email: robert_davis@ncsu.edu http://muriserver.mte.ncsu.edu Contract: ONR MURI N000014-98-1-0654. MURI, year started: 1998. March 2002. Objectives:

319 views • 1 slides