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Properties of GaN Films Grown by Atomic Layer Deposition Using Low-temperature III-nitride Interlayers J. R. Gong

Properties of GaN Films Grown by Atomic Layer Deposition Using Low-temperature III-nitride Interlayers J. R. Gong Department of Materials Science and Engineering Feng Chia University June 4, 2004. Co-workers. C. L. Wang B. H. Shih Y. L. Tsai I. H. Chien

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Gan interlayer - PowerPoint PPT Presentation

Properties of GaN Films Grown by Atomic Layer Deposition Using Low-temperature III-nitride Interlayers J. R. Gong