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High resistivity silicon - PowerPoint PPT Presentation

REACTIONS OF INTERSTITIAL CARBON WITH BACKGROUND IMPURITIES IN N- AND P-TYPE SILICON STRUCTURES

REACTIONS OF INTERSTITIAL CARBON WITH BACKGROUND IMPURITIES IN N- AND P-TYPE SILICON STRUCTURES. L.F. Makarenko*, L.I. Murin** , M. Moll***, F.P. Korshunov**, S.B. Lastovski** * Belarusian State University, Minsk, Belarus **Institute of Solid State and Semiconductor Physics, Minsk, Belarus

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High resistivity silicon - PowerPoint PPT Presentation

REACTIONS OF INTERSTITIAL CARBON WITH BACKGROUND IMPURITIES IN N- AND P-TYPE SILICON STRUCTURES