'Inhomogeneous broadening' presentation slideshows

Radiation-Induced Trap Spectroscopy in Si Bipolar Transistors and GaAs Diodes

Radiation-Induced Trap Spectroscopy in Si Bipolar Transistors and GaAs Diodes. 22 nd RD50 Workshop University of New Mexico June 3-5, 2013 Robert Fleming Sandia National Labs. Outline. Introduction Research Objectives DLTS & transistor fundamentals Silicon

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Lecture #9: Inhomogeneous Broadening, the Laser Equation, and Threshold Gain

Lecture #9: Inhomogeneous Broadening, the Laser Equation, and Threshold Gain. Substitute Lecturer: Tom Spinka Tuesday, Sept. 22 nd , 2009. Topic #1: Inhomogeneous Broadening. Homogeneous vs. Inhomogeneous Broadening. There are two general classification of line broadening:

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Non-classical light and photon statistics

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From Reinhard Schinke

From Reinhard Schinke. From Reinhard Schinke. From Reinhard Schinke. From Reinhard Schinke. From Reinhard Schinke. Lasers: N 2 >>N 1. 2. A 23. B 21 W( w ). A 21. B 23 W p ( w ). 1. A 13. 3. Lasers: N 2 >>N 1. 2. Lase. A 23. B 21 W( w ). A 21 slow. B 23 W p ( w ). 1. Pump.

292 views • 15 slides