'Isr 1' presentation slideshows

Semiconductor Device Modeling and Characterization EE5342, Lecture 9 -Spring 2010

Semiconductor Device Modeling and Characterization EE5342, Lecture 9 -Spring 2010. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. Effect of carrier recombination in DR. The S-R-H rate ( t no = t po = t o ) is. Effect of carrier rec. in DR (cont.).

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Semiconductor Device Modeling and Characterization EE5342, Lecture 9-Spring 2005

Semiconductor Device Modeling and Characterization EE5342, Lecture 9-Spring 2005. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. You must have a Gamma account Go to the OIT webpage for a gamma account Use UNIX workstations in ELB212

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ISR 1

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