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Si comp 27 - PowerPoint PPT Presentation

Comparing XRD data for 225C and 300C growth of Si-Heusler.

Comparing XRD data for 225C and 300C growth of Si-Heusler. Some composition assumption for sample grown at 225C. S230 grown at 300C Si Comp = 22.9 at.%. S239 grown at 225C Si Comp = 27 at.%?. Things I noticed:. (022) intensity higher for 225C growth at Heusler Comp

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Si comp 27 - PowerPoint PPT Presentation

Comparing XRD data for 225C and 300C growth of Si-Heusler.