'Si sio 2 interface' presentation slideshows

Process Flow

Process Flow. Steps Choose a substrate Add epitaxial layers if needed Form n and p regions Deposit contacts and local interconnects Deposit Multilevel metalization with isolating dielectrics between layers Backside processing Bonding pad deposition Final test Die separation Packaging.

650 views • 37 slides

Process Flow

Process Flow. Steps Choose a substrate Add epitaxial layers if needed Form n and p regions Deposit contacts and local interconnects Deposit Multilevel metalization with isolating dielectrics between layers Backside processing Bonding pad deposition Final test Die separation Packaging.

574 views • 37 slides

Surface Effects and Breakdown Voltage

Surface Effects and Breakdown Voltage. Gian-Franco Dalla Betta INFN and DISI - University of Trento Via Sommarive, 14 I-38123 Povo di Trento (TN), Italy dallabe@disi.unitn.it. Outline. Introduction Basic mechanisms Main parameters: how to measure them experimental results

527 views • 32 slides

Si Oxidation and Dielectrics

Si Oxidation and Dielectrics. Topics: Capacitors & Dielectrics Piezoelectrics Oxide films on Silicon. Capacitance. A parallel plate capacitor when in a vacuum (above) and when a dielectric material is present (below. D o ? charge density (C/m 2 )

465 views • 27 slides

Proposal for an FP6 STREP FET based on nanodevice ideas with SiC

Proposal for an FP6 STREP FET based on nanodevice ideas with SiC. The IST thematic priority will also support Specific Targeted Research Projects ( STREP s) several STREPs are also foreseen in most objectives. Information Society Technologies 2003-2004 Workprogramme.

228 views • 22 slides

Proposal for an FP6 STREP FET based on nanodevice ideas with SiC

Proposal for an FP6 STREP FET based on nanodevice ideas with SiC. The IST thematic priority will also support Specific Targeted Research Projects ( STREP s) several STREPs are also foreseen in most objectives. Information Society Technologies 2003-2004 Workprogramme.

354 views • 21 slides

Proposal for an FP6 STREP FET based on nanodevice ideas with SiC

Proposal for an FP6 STREP FET based on nanodevice ideas with SiC. The IST thematic priority will also support Specific Targeted Research Projects ( STREP s) several STREPs are also foreseen in most objectives. Information Society Technologies 2003-2004 Workprogramme.

336 views • 21 slides

Lecture 18

658 views • 17 slides

Jie Chen, David Wright, and Hugh Barnaby Electrical Engineering, ASU, Tempe, Az

Studying the Effect of Molecular Hydrogen on Silicon Device Radiation Response Using Gated Bipolar Transistors. Jie Chen, David Wright, and Hugh Barnaby Electrical Engineering, ASU, Tempe, Az. Topics of Discussion. Motivation for the study Background Initial experimental results

218 views • 14 slides