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SiO 2 Etching Characteristics of Perfluoro-2-butene (l-C 4 F 8 ) and Hexafluoropropene (l-C 3 F 6 )

SiO 2 Etching Characteristics of Perfluoro-2-butene (l-C 4 F 8 ) and Hexafluoropropene (l-C 3 F 6 ). Abstract authors: C.H. Shin and M.Nakamura et al. Environmentally Benign Etching Technology Laboratory Association of Super-advanced Electronics Technologies, Japan Presented by Zhenwei Hou.

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Sio2 etching characteristics - PowerPoint PPT Presentation

SiO 2 Etching Characteristics of Perfluoro-2-butene (l-C 4 F 8 ) and Hexafluoropropene (l-C 3 F 6 )