1 / 43

Title

Title. Dual mode RF CMOS Power Amplifier with transformer for polar transmitters. March. 26, 2007 Changkun Park Wave Embedded Integrated Systems (WEIS) Lab. School of Electrical Engineering and Computer Science Korea Advanced Institute of Science and Technology (KAIST).

shania
Download Presentation

Title

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. Changkun Park Title Dual mode RF CMOS Power Amplifier with transformer for polar transmitters March. 26, 2007 Changkun Park Wave Embedded Integrated Systems (WEIS) Lab. School of Electrical Engineering and Computer Science Korea Advanced Institute of Science and Technology (KAIST)

  2. Changkun Park Introduction / Motivation 1. Efficiency of polar transmitter 2. Voltage combining technique Variable Load Technique Proposed Stage-Convertible Power Amplifier 1. Power amplifier with three-port transformer 2. Power amplifier with dual-primary transformer Proposed Tournament-Shaped Power Combiner 1. Theory of tournament-shaped power combiner 2. Circuit design Conclusions Contents

  3. Changkun Park Polar transmitter Simplified architecture Two Input signals Features • Amplitude signal  Supply voltage • Phase signal  RF input • Switching mode PA • Suitable for GSM and EDGE • Not required mixers and filters

  4. Changkun Park PA for polar transmitters Non-linear power amplifier ( Class E ) POUT =1.365 X VDD2 / RLOAD • Implementable with current CMOS Low power efficiency Dynamic range • In the high power  high efficiency • In the low power  low efficiency • GSM ~ 20 dB / EDGE ~ 37 dB • In the low power  low efficiency • In the low power  low efficiency • Range of VDD  Dynamic range

  5. Changkun Park Strategy for CMOS PA Characteristics of CMOS Problems Solutions Goal Low breakdown voltage Low output power Cascode structure High efficiency CMOS PA for polar transmitters Lossy substrate Low efficiency Voltage combining method No via process Gain reduction Differential structure Conventional polar Tx Low efficiency in the low output power Multi-mode structure

  6. Changkun Park Voltage combining technique Current combining technique • Hard to implement output matching on a chip • Sensitive matching network Voltage combining technique • Impedance transformation • Low losses Ref : I. Aoki et al, “Distributed active transformer,” T-MTT, Jan. 2002.

  7. Changkun Park Introduction / Motivation 1. Efficiency of polar transmitter 2. Voltage combining technique Variable Load Technique Proposed Stage-Convertible Power Amplifier 1. Power amplifier with three-port transformer 2. Power amplifier with Dual-primary transformer Proposed Tournament-Shaped Power Combiner 1. Theory of tournament-shaped power combiner 2. Circuit design Conclusion Contents

  8. Changkun Park Efficiency problems of polar Tx. Efficiency problems of polar Tx. Low efficiency in the low output power region

  9. Changkun Park Solution for efficiency problems Proposed Solutions for high efficiency • Fixed high PIN & Low POUT  Low PAE regardless High DE • High Power Mode : Low RLOAD • Low Power Mode (High PAE) : High RLOAD

  10. Changkun Park Dynamic range problems Dynamic range Proposed Solutions for dynamic range • VDD : 0.7 V ~ 3.3 V  Dynamic Range ~ 13.5 dB • Dynamic range for GSM > 20 dB • Dynamic range ~ f(VDD , RLOAD)

  11. Changkun Park Proposed stage-convertible stru. Proposed architecture Operation • Load impedance of driver stage  high RLOAD  high Eff. In the low POUT • Load impedance of power stage  low RLOAD  high maximum POUT • High power mode  all stages are turned on  POUT ~ POUT of power stage • Low power mode  power stage is turned off  POUT ~ POUT of driver stage

  12. Changkun Park Proposed stage-convertible PA Stage-convertible structure Implementation

  13. Changkun Park Proposed stage-convertible PA Schematic

  14. Changkun Park Proposed stage-convertible PA Implementation • TSMC 0.25 m RFCMOS process • 50 Ω I/O matching • Chip size : 1.2 mm X 1.8 mm • Design strategy • Differential structure • Cascode structure • Transmission line transformer

  15. Changkun Park Proposed stage-convertible PA Measurement results • VDD : 0.7 V ~ 3.3 V • Frequency : 1. 88 GHz (GSM) • Maximum POUT : 28 dBm • Maximum DE : 34 % • Low power efficiency improvement : 130 % at 16 dBm POUT • Dynamic range : 37 dB

  16. Changkun Park Proposed stage-convertible PA Contributions • Problems of PA for polar transmitters are analyzed. • Stage-convertible structure is proposed.  Variable load technique is used.  Low efficiency at low output power region is improved. Ref : Changkun Park et al, “Power Amplifier,” patent registered num. Korea, 2007. Changkun Park et al, “Power amplifier using 3-port transmission line transformer,” patent pending. Korea / USA / Japan / China, 2006. Changkun Park et al, “A 1.9-GHz Triple-Mode Class-E Power Amplifier for a Polar Transmitter,” MWCL, Feb. 2007.

  17. Changkun Park Introduction / Motivation 1. Efficiency of polar transmitter 2. Voltage combining technique Variable Load Technique Proposed Stage-Convertible Power Amplifier 1. Power amplifier with three-port transformer 2. Power amplifier with Dual-primary transformer Proposed Tournament-Shaped Power Combiner 1. Theory of tournament-shaped power combiner 2. Circuit design Conclusion Contents

  18. Changkun Park Proposed SC PA using TLT Impedance transformation using transmission line transformer

  19. Changkun Park Proposed SC PA using TLT Impedance transformation Assume RT = 25 Ω k-factor = 0.5 • L1 increase  High RLOAD • L1 decrease  Low RLOAD • L1 can be changed by • Length • Width • Structure

  20. Changkun Park Proposed SC PA using TLT Proposed 3-port transformer • Multi-primary structure • Dual load impedance  Suitable for variable load PA

  21. Changkun Park Proposed SC PA using TLT High power mode Low power mode • All of the stages are turned on • Driver stage drives the power stage • Low RLOAD  High maximum POUT • Power stage is turned off • POUT of Driver stage = POUT of PA • High RLOAD  Efficiency & Dynamic range increase

  22. Changkun Park Proposed SC PA using TLT Simplified schematic

  23. Changkun Park Proposed SC PA using TLT Implementation • TSMC 0.18 m RFCMOS process • 50 Ω I/O matching • Chip size : 1.3 mm X 1.6 mm • Design strategy • 3-port transformer • Differential structure • Cascode structure • Transmission line transformer

  24. Changkun Park Proposed SC PA using TLT High power mode Low power mode Auto-switching mode • Frequency : 1. 9 GHz • Pin = 6.19 dBm • Supply voltage : 0.5 ~ 3.3 V

  25. Changkun Park Proposed SC PA using TLT Measured PAE vs. POUT Measured POUTvs.VDD • Frequency : 1.9 GHz • VDD : 0.5 V ~ 3.3 V • Dynamic Range > ~ 20 dB • Efficiency Improvement at 16 dBm ~ 370 %

  26. Changkun Park Proposed stage-convertible PA Contributions • Transmission line transformer is analyzed.  Impedance transformations using parasitic components of transmission line transformer • Stage-convertible structure using TLT is proposed.  3-port asymmetric transformer is proposed.  Output power is increased. Ref : Changkun Park et al, “Transmission line transformer,” patent registered. Korea, 2007. Changkun Park et al, “Transmission line transformer,” patent pending. USA / Japan, 2006. Changkun Park et al, “A 1.9-GHz CMOS Power Amplifier Using Three-Port Asymmetric Transmission Line Transformer for a Polar Transmitter,” T-MTT, Feb. 2007. published.

  27. Changkun Park Improved SC PA using TLT Low power efficiency improvement • For low power mode, high inductance is needed.  parasitic resistance is increased.  low power efficiency improvement may be degraded.

  28. Changkun Park Improved SC PA using TLT High power mode • Impedance transformation ratio 1:8 • Very small size (transformer) 1000 m X 1000 m (previous work)  670 m X 510 m

  29. Changkun Park Improved SC PA using TLT Low power mode

  30. Changkun Park Improved SC PA using TLT Implementation • TSMC 0.18 m RFCMOS process • 50 Ω I/O matching • Chip size : 1.15 mm X 1.3 mm • Design strategy • Differential structure • Cascode structure • Transmission line transformer

  31. Changkun Park Improved SC PA using TLT Measured freq. responses Reliability at maximum POUT • Frequency : 1.8 GHz • VDD : 0.5 V ~ 3.3 V • Dynamic Range ~ 20 dB • Efficiency at 16 dBm ~ 33 % • PIN = 10 dBm • VDD = 3.3 V (Maximum POUT condition) • Gain at 1.8 GHz = 21.6 dB

  32. Changkun Park Comparison with previous work Measured freq. responses • Maximum POUT is almost same with previous work • Eff. at Maximum POUT is almost same with previous work • Low power efficiency is improved

  33. Changkun Park Improved stage-convertible PA Contributions • Transmission line transformer is analyzed.  Conditions to improve efficiency is found • Dual-primary transformer is proposed.  Low power efficiency is improved. Ref : Changkun Park et al, “Multi-Primary Transformer,” patent registered. Korea, 2007. Changkun Park et al, “A 1.8-GHz CMOS Power Amplifier Using a Dual-Primary Transformer with Improved Efficiency in the Low Power Region,” T-MTT, submitted.

  34. Changkun Park Introduction / Motivation 1. Efficiency of polar transmitter 2. Voltage combining technique Variable Load Technique Proposed Stage-Convertible Power Amplifier 1. Power amplifier with three-port transformer 2. Power amplifier with Dual-primary transformer Proposed Tournament-Shaped Power Combiner 1. Theory of tournament-shaped power combiner 2. Circuit design Conclusion Contents

  35. Changkun Park Proposed Tournament combiner Distributed active transformer Another solutions

  36. Changkun Park Proposed Tournament combiner

  37. Changkun Park Proposed Tournament combiner

  38. Changkun Park Proposed Tournament combiner Implementation • TSMC 0.18 m RFCMOS process • Fully integrated PA with 50 Ω I/O matching • Chip size : 1.2 mm X 2.0 mm • Design strategy • Tournament-shaped power combiner • Differential structure • Cascode structure

  39. Changkun Park Proposed Tournament combiner Measured PAE vs. POUT Frequency response • Frequency : 1.81 GHz • VDD : 0.5 V ~ 3.3 V • Maximum POUT = 31.7 dBm • Eff. = 38 % at max. POUT • Broad band characteristics

  40. Changkun Park Proposed Tournament combiner Contributions • Tournament-shaped power combiner is proposed.  Isolation problems between TLT and input feed-line are solved. Ref : Changkun Park et al, “Power amplifier used power combiner,” patent pending. Korea, 2007. Changkun Park et al, “Tournament-Shaped Magnetically Coupled Power Combiner Architecture for RF CMOS Power Amplifier,” T-MTT, submitted.

  41. Changkun Park PA for polar transmitter Efficiency characteristics are analyzed. Transformers for dual-mode power amplifier Power amplifier with 3-port transformer is proposed. Power amplifier with dual-primary transformer is proposed. New power combiner Tournament-shaped power combiner is proposed. Conclusions

  42. Changkun Park International Journals Published “Fully integrated 1.9-GHz CMOS power amplifier for polar transmitter applications,” Microw. and Optical Technology Lett., vol. 48, no. 10, pp. 2053-2056, Oct. 2006. “A 1.9-GHz Triple-Mode Class-E Power Amplifier for a Polar Transmitter,” IEEE Microw. and Wireless Components Lett., vol. 17, no. 2, pp. 148-150, Feb. 2007. “A 1.9-GHz CMOS Power Amplifier Using Three-Port Asymmetric Transmission Line Transformer for a Polar Transmitter,” IEEE Trans. Microw. Theory and Tech., vol. 55, no. 2, part 1, pp. 230-238, Feb. 2007., vol. 17, no. 2, pp. 148-150, Feb. 2007. Submitted “A 1.8-GHz CMOS Power Amplifier Using a Dual-Primary Transformer with Improved Efficiency in the Low Power Region,” IEEE Trans. Microw. Theory and Tech. “Tournament-Shaped Magnetically Coupled Power Combiner Architecture for RF CMOS Power Amplifier,” IEEE Trans. Microw. Theory and Tech. International Patents “Transmission line transformer,” USA / Japan. “ Power amplifier with automatically switching facility,” USA / Japan / China “ Power amplifier using 3-port transmission line transformer,” USA / Japan / China “ Power amplifier,” USA / Japan / France Domestic Patents - 16 Publications

  43. Changkun Park Improved SC PA using TLT Equations Simulation results

More Related