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The University of New Mexico Semiconductor Detector Group

The University of New Mexico Semiconductor Detector Group Proposal for admission to the RD50 Collaboration Sally Seidel University of New Mexico May 20, 2003. Group members, and their time fraction available for RD50 activities: Igor Gorelov , Research Assistant Professor of Physics: 25%

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The University of New Mexico Semiconductor Detector Group

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  1. The University of New Mexico Semiconductor Detector Group Proposal for admission to the RD50 Collaboration Sally Seidel University of New Mexico May 20, 2003

  2. Group members, and their time fraction available for RD50 activities: • Igor Gorelov, Research Assistant Professor of Physics: 25% • Martin Hoeferkamp, Electrical Engineer: 75% • Giuseppe Latino, Post-doctoral Fellow: 25% • Dmitriy Naoumov, Ph.D. candidate: 20% • Sally Seidel, Associate Professor of Physics: 20% • Amanda Burghard, B.S. candidate: 50% • 2 additional Ph.D. students will join the program in January 2004: Hugo Hernandez and Fabrizio Margaroli---20% each

  3. Our current research activities: • ATLAS pixel sensors: design, development, irradiation, and quality assurance (http://www-hep.phys.unm.edu/atlas_pixel/) • CDF Run2b silicon strip sensors: irradiation and quality assurance (http://www-hep.phys.unm.edu/cdfrun2b/) • Our previous experience: • CDF SVXII silicon strip sensor design, development, irradiation, testing, and QA • Our field of interest within the RD50 Collaboration is development and testing of new materials and new structures.

  4. Our related refereed publications: • Electrical Characteristics of Silicon Pixel Sensors, I. Gorelov et al., Nucl. Instr. and Meth. A 489 (2002) 202-217. • A Review of Design Considerations for the Sensor Matrix in Semiconductor Pixel Detectors for Tracking in Particle Physics Experiments, S. Seidel, Nucl. Instr. and Meth. A 465 (2001) 267-296. • Capacitance of Silicon Pixels, G. Gorfine, M. Hoeferkamp, G. Santistevan, and S. Seidel, Nucl. Instr. and Meth. A 460 (2001) 334-349. • The ATLAS Silicon Pixel Sensors, M. Alam et al., Nucl. Instr. and Meth. A 456 (2001) 217-232. • Studies of Double-sided Silicon Microstrip Detectors, S.C. Seidel, et al., Nucl. Instr. and Meth. A 383 (1996) 128-136.

  5. Publications, continued: • Measurement of Proton-Induced Radiation Damage in Double-sided Silicon Microstrip Detectors, A. Brandl, S. Seidel, and S. Worm, Nucl. Instr. and Meth. A 399 (1997) 76-84. • Capacitance Measurements of Double-sided Silicon Microstrip Detectors, M.A. Frautschi, M.R. Hoeferkamp, and S.C. Seidel, Nucl. Instr. and Meth. A 378 (1996) 284-296. • Characterization Procedures for Double-sided Silicon Microstrip Detectors, N.L. Bruner, M.A. Frautschi, M.R. Hoeferkamp, and S.C. Seidel, Nucl. Instr. and Meth. A 362 (1995) 315-337. • A Fixture for Probing Double-sided Silicon Microstrip Detectors, M.A. Frautschi, S. Seidel, and A. Webster, Nucl. Instr. and Meth. A 355 (1995) 521-525.

  6. Available resources: • Class 10000 cleanroom • 2 probestations, one semi-automatic • precision LCR, I, V measurement including scanner

  7. Available resources, continued: • thermal chuck for measurements to -65C • contactless wafer geometry gauge • manual wirebonder • precision XY stages and pulsed laser source for controlled characterization of sensors • We may be able to facilitate irradiations to extreme fluences at nearby Sandia National Laboratory.

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