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Consensus Areas for the Lithography 2001 Update

Consensus Areas for the Lithography 2001 Update. Scenario 3.7 is OK. Pending clarification of the definition of CD control. Must also verify that 10% CD is a necessary requirement. Task involving the Design ITWGs.

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Consensus Areas for the Lithography 2001 Update

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  1. Consensus Areas for the Lithography 2001 Update • Scenario 3.7 is OK. • Pending clarification of the definition of CD control. • Must also verify that 10% CD is a necessary requirement. • Task involving the Design ITWGs. • There should be separate tables for optical and Next Generation Lithography (NGL) masks. • Electron beam direct write (EBDW)  Maskless Lithography (ML2).

  2. Consensus Areas for the Lithography 2001 Update • We have agreed on an approach for narrowing future options: • The Technical Champion must show that: 1) The technology option has a viable Beta Tool Program (funding and technical resources) targeting a technology demonstration 3 years prior to the required manufacturing ramp. 2) At least one commercial tool supplier is committed to supporting a viable technical program and has a business plan for producing > 12 systems within the year before production. • A decision on the 90 nm node will be fixed by October.

  3. Key Issues in Lithography • Contacts drive mask technology. • Mask error factor is largest for contacts. • Line edge roughness is a key issue for lithography. • There are associated metrology requirements as well. • We are considering dropping the depth-of-focus requirement. • The European Lithography TWG will double check. • We need a more rigorous definition of CD control.

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