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Implementations of Threshold Logic Authors: Tadashi Shibata and Tadahiro ; Kevin J. Chen, Takao Waho, Koichi Maezawa, and Masafumi Yamamoto Speaker: Chen-Kuan Tsai 2012/02/08. Outline. Neuron MOS Basic Structure Example: XOR Resonant Tunneling Diode (RTD) Background

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  1. Implementations of Threshold LogicAuthors: Tadashi Shibata and Tadahiro ; Kevin J. Chen, Takao Waho, Koichi Maezawa, and Masafumi YamamotoSpeaker: Chen-Kuan Tsai2012/02/08

  2. Outline • Neuron MOS • Basic Structure • Example: XOR • Resonant Tunneling Diode (RTD) • Background • Example: XOR using RTD/FET • Example: AND using MOBILE • Conclusion

  3. Neuron MOS • Basic Structure An ordinary MOSFET except using the potential of floating gates to determine the on/off state of the transistor

  4. Neuron MOS (cont.) • Example: XOR This example is composed of a D/A Converter, pre-input-gate inverter, a neuron circuit, and a conventional inverter.

  5. Neuron MOS (cont.) • Parameters for 2-bit D/A Converter C1/C2 = ½, and then ΦF is proportional to X1+2X2 • Determine the output voltage for instance, βR=1, |VTn|-VTp=VDD/4, (C1+C2)/CTOT = ¾ Vp = (1/4 X1+1/2 X2)VDD+1/8 VDD and

  6. Neuron MOS (cont.) • A standard value for the principal gate and for the inversion threshold of the neuron MOS inverter • Floating-Gate Potential Diagram

  7. Neuron MOS (cont.) • Same structure with different configuration

  8. Neuron MOS (cont.) • Soft Hardware Logic Circuit

  9. Resonant Tunneling Diode • Background • Negative Differential Resistance (NDR) an increase in the current results in a decreased voltage • Quenching when the voltage drop across the RTD is large enough to pull the resonant state in the quantum-well below the conduction band minimum in the emitter

  10. Resonant Tunneling Diode (cont.) • Resonant Tunneling Diode • consist of two NDR devices with different peak currents connected in series • When VBIAS increases from 0 to Vmax, only one of the NDR devices can be quenched and switching to the high-voltage state.

  11. Resonant Tunneling Diode (cont.) • Example: XOR using RTDs and FETs • Different areas are designed for the RTD’s so that their peak currents have Ip1 < Ip2 < Ip3 • The control gates is used to adjust the initial values of the peak current of each NDR device

  12. Resonant Tunneling Diode (cont.) • Monostable Bistable Logic Element (MOBILE) • Consists of two RTDs, driver and load, driven by a Vbias When Vbias is low, both RTDs are in ON state. With increasing Vbias, RTD with lower peak current witches to OFF state.

  13. Resonant Tunneling Diode (cont.) • Generic MOBILE Threshold Gate

  14. Resonant Tunneling Diode (cont.) • Example: AND using Monostable-Bistable Logic Element (MOBILE)

  15. Resonant Tunneling Diode (cont.)

  16. Conclusion • The design procedures of both implementations are simple and straightforward • Both come up with a flexible structure by connecting extra external control signal to change the functionality, and capable of weighted-sum and threshold operations

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