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CMOS Technology Characterization for Analog and RF Design

CMOS Technology Characterization for Analog and RF Design. Author : Behzad Razavi Presenter : Kyungjin Yoo. Index. Introduction Motivation and Issues Characterization for analog design Characterization for RF design. Introduction. CMOS: inadequate for analog and RF design?

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CMOS Technology Characterization for Analog and RF Design

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  1. CMOS Technology Characterizationfor Analog and RF Design Author : Behzad Razavi Presenter : Kyungjin Yoo

  2. Index • Introduction • Motivation and Issues • Characterization for analog design • Characterization for RF design

  3. Introduction • CMOS: inadequate for analog and RF design? • Limited active, passive devices • Optimized technology for digital design • Poor characterization and modeling • Sophisticated set of characteristics • speed, noise, linearity, loss, matching, and dc characteristics • Technology characterization methods

  4. Motivation and Issues • Tradeoff difference • digital CMOS technology vs. analog circuits speed  power dissipation

  5. Motivation and Issues • Need for analog characterization • Inaccurate modeling, lack of modeling • Rapid migration of digital circuits • Difficulties • Various systems • Difficult to measure • Difficult to incorporate in simulations • Time and effort • Modification for next generation

  6. Characterization for analog design • DC Behavior • AC Behavior • Linearity • Matching • Temperature Dependent • Noise

  7. DC Behavior • Have measured I-V data points • Subthreshold characteristics of MOSFET • Output resistance of short-channel MOS transistors

  8. AC Behavior • device level • and must be measured under bias conditions • Nonlinearity of MOS gate-channel capacitance • Capacitance of the n-well to the substrate • circuit level • Frequently used building blocks as test vehicles (e.g. ring oscillators) • Voltage comparator for intrinsic speed of the technology

  9. Linearity • Passive devices • . • Coefficients must be measured • Active devices • Minimize the nonlinearity by adequate open-loop gain • Quantify the overall nonlinearity using Fig.10

  10. Matching

  11. Temperature Dependence • Basic device parameters • Output resistance, subthreshold conduction, capacitance • Other quantities • Transconductance, on-resistance, threshold voltage, ac properties • DC and AC temperature dependencies of devices must be measured and incorporated in simulations

  12. Characterization for RF design • Device Properties • Noise • Circuit Properties

  13. Device Properties • Limit active devices, More passive monolithic devices • Inductors - measured data for parameters • Varactors • Transformers

  14. Noise • Thermal noise of submicrometer MOS transistor long-channel approximation • Capacitive coupling of the drain noise current to the gate • Modulation of the threshold voltage by the body thermal noise • 1/f noise of MOSFET’s • Values to be measured are too small to be sensed

  15. Circuit Properties • Dependent on • Overall transceiver architecture • Intended wireless standard • Issues in today’s RF CMOS design • Variability of device and circuit parameters with process and temperature • Matching properties • Frequency divider • Power Amplifiers

  16. Thank you ! Q & A

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