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Projected Range Statistics. September 22, 2004. Projected Range Statistics. Projected Range Tables are taken from SRIM SRIM is available from www.srim.org Originally written at IBM Research, Yorktown Heights Under the direction of J. F. Ziegler and J. P. Biersack
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Projected Range Statistics September 22, 2004
Projected Range Statistics • Projected Range Tables are taken from SRIM • SRIM is available from www.srim.org • Originally written at IBM Research, Yorktown Heights • Under the direction of J. F. Ziegler and J. P. Biersack • This presentation translates the data for antimony, arsenic, boron, phosphorus ions implanted into silicon, silicon dioxide, silicon nitride and photoresist (as represented by AZ 111) into graph form. • The solid lines are the Projected Range statistics for the various ions. • Delta refers to the straggle statistic for the various ions and is represented by the dashed lines. • The first 4 graphs are for the typical energies available on commercial implanters using singly charged ions. • The last 4 graphs are for typical energies on commercial implanters using multiply charged ions.