3 D Transistor

1. 3D Transistor Research Report G.V. Kobyz group 8V83 E.O. Proskurina language instructor

2. Contents • Introduction • Main Aspects of Research • Methods of Research • Results • Conclusion

3. Introduction • The area of the research deals with production of digital devices:

4. The aims of the study • To investigate the problem of reducing the size of transistors • To study the problem of reducing their energy consumption • To examine the problem of electric breakdown of the transistor

5. Main Aspects of Research • Advantages and disadvantages of technology • Calculation of performance of new transistors • Measurement of power consumption • Efficiency • Areas of IT technology where it can be applied

6. Methods of Research • Review scientific reports • Review scientific articles • Empirical part in the form of the interview

7. Results and Discussion • 22nm 3D Transistor provide improved perfomance at high voltage and an unprecedented perfomance gain at low voltage

8. Results and Discussion

9. Conclusion • Tri-gate transistors could improve performance and energy efficiency • Tri-gate transistors could become the basic building block for microprocessors in future technology nodes

10. Thank you for attention