Yale University, New Haven, CT USA Brookhaven National Laboratory, Upton, NY USA

1. Yale University, New Haven, CT USA Brookhaven National Laboratory, Upton, NY USA Rutherford Appleton Laboratory, Chilton, Didcot, UK National Semiconductor Corp, Richardson, TX, USA New York University, New York, NY, USA

2. Length of Power Cables = 140 Meters 4088 Cables 3.5 V Cable Resistance = 4.5 Ohms 10 Chip Hybrid – SCT Module for LHC 10.25 V 1.5 amps Voltage Drop = 6.75 V Counting House 1.3 V 20 Chip Hybrid – Si Tr Module for Hi Luminosity 12.1V Voltage Drop = 10.8V 2.4 amps X 10 DC-DC Power Converter 1.3 V 13 V 20 Chip Hybrid – Si Tr Module for Hi Luminosity 14.08 V Voltage Drop = 1.08 V 2.4 amps 0.24 amps

3. Agenda • Learning from Commercial Devices • Buck > Voltage, EMI • Plug In Cards for ABCN2.5 Hybrids - Noise Tests @Liverpool • Require Radiation resistance & High Voltage operation • Thin Oxide • High Voltage with Thin Oxide ? • DMOS, Drain Extension 12V @ 5 nm , 20V @ 7 nm • HEMT has no Oxide – Higher Voltage ? 200 Mrads 20V

4. Enpirion EN5360 • Found out at Power Technology conference 0.25 µm Lithography • Irradiated Stopped on St. Valentines Day 2007 • No effects after 100 Mrads • Noise tests at Yale, RAL & BNL. • 20 µm Al is good shield for Air Coils • All other devices failed, even other part numbers from Enpirion • We reported @ TWEPP 2008 - IHP was foundry for EN5360 • What makes Radiation Hardness ? • Chinese Company Devices

5. 100 ns 900 ns Control Synch Synchronous Buck Converter Control Switch 30 mΩ Power Stage- High Volts Synch Switch 20 mΩ Error Amp Power Stage Drivers Controller Low Voltage Pulse Width Controller V reference Buck Safety Minimum Switch ON Time Limits Max Frequency Vout = 10% Control Switch: Switching Loss > I2 Synch Switch: Rds Loss Significant 500 ns 500 ns Vout = 50%

6. EMI Antenna Loops Q1 Control Switch Q2 Current is switched from Q1 to Q2 with minimum Impedance change Advice form a company application note Since the switching noise is generated primarily by the power stage of the supply, careful layout of the power components should take place before the small signal components are placed and routed. The basic strategy is to minimize the area of the loops created by the power components and their associated traces. In the synchronous buck converter shown above the input (source) loop #1 ideally consists of a DC current with a negligible AC ripple. Loop numbers 2 and 3 are the power switch loops. The current in these loops is composed of trapezoidal pulses with large peaks and fast edges (di/dt and dv/dt). The area of these loops will be determined primarily by how close together the power components, the inductor, and the capacitors Cin and Cout can be placed. The closer the components, the shorter the PCB traces connecting them, and therefore the smaller loop area.

7. Requirements Voltage Ratio > 8 For Good Efficiency Iout >3 amps Air Coil / Magnetics Radiation Hardness Output Voltage Tolerance +/- 5% Vin = 2.5 – 17 V Vout = 2.5 / 1.3 V GND Small Plug-in Card Absolute Max 10% For Long Lifetime GND Enable Power Good Load 0.25 µm Technology Test ASIC 2.5 V @ ~ 3 amps. Actual 5 amps 0.13 µm Technology ASIC 1.3 V @ ? Plug in Card – Power Yale Model 2151

8. Shielded Buck Inductor Coupled Inductor Connected in Series Shielding Spiral – One end to GND Spiral Coils Resistance in mΩ Shielding Spiral – One end to GND 4 layers Layer1: Top Coil with no connection - Shield Layer2: coil Connect in series Layer3: coil Connect in series Layer4: Bottom Coil with no connection- Shield Spacing between Layer 2 & 3 = 14 mills ( 0.35 MM) Proximity Effect Top & Bottom can be more as there is no loss from these

9. Power IN Enable / Disable Power Good Out Power Out Kelvin points for Vin & Vout Model 2151_Max8654 Yale University April 09, 2009 Yale University April 09, 2009

10. Solenoid Copper Coils PCB embedded Coil

11. Monolithic: 14V, 8A, 1.2MHz Multichip: 16V, 8A, 1.5MHz Plug In Card: DC-DC Powering 2 Different ICs 3 Different Coils Tests @ Liverpool Sept 17,09 Embedded 3 oz Cu Etched Cu Foils 0.25 mm Solenoid without Ferrite Yale Model 2151a

12. Hybrid in Thermal Shield Noise Same with Linear or DC - DC Shield 20 µm Al Foil Noise NO change with Plug in card on top Sensor 1 cm from Coil

13. Can We Have High Radiation Tolerance & Higher Voltage Together ??? Controller : Low Voltage High Voltage: Switches – LDMOS, Drain Extension, Deep Diffusion etc >> 20 Volts HEMT GaN on Silicon, Silicon Carbide, Sapphire

14. Thin Gate Oxide Book ‘Ionizing Radiation Effects in MOS Oxides’ Author Timothy R. Oldham Thin oxide implies lower operating voltage

15. LDMOS Structure Laterally Diffused Drain Extension High Voltage / high Frequency Main market. Cellular base stations High performance RF LDMOS transistors with 5 nm gate oxide in a 0.25 μm SiGe:C BiCMOS technology: IHP Microelectronics Electron Devices Meeting, 2001. IEDM Technical Digest. International2-5 Dec. 2001 Page(s):40.4.1 - 40.4.4

16. R. Sorge et al , IHP Proceedings of SIRF 2008 Conference High Voltage Complementary Epi Free LDMOS Module with 70 V PLDMOS for a 0.25 μm SiGe:C BiCMOS Platform

18. Non IBM Foundry ICs

19. For Higher Radiation Resistance • Oxide Thickness is predominant Effect • Others Epi Free processing is Good ? • Oxide Processing is standard • ?????

20. From China

22. Enhancement Mode Normally OFF Depletion Mode Normally ON

23. GaN for Power Switching

24. Gallium Nitride Devices under Tests • RF GaN 20 Volts & 0.1 amp • 8 pieces: Nitronex NPT 25015: GaN on Silicon • Done Gamma, Proton & Neutrons • 65 volts Oct 2009 • 2 pieces: CREE CGH40010F: GaN on siC • 6 pieces: Eudyna EGNB010MK: GaN on siC • Done Neutrons Switch GaN • International Rectifier GaN on Silicon Under NDA Gamma: @ BNL Protons: @ Lansce Neutrons: @ U of Mass Lowell Plan to Expose same device to Gamma, Protons & Neutrons

26. No change in the average current for 200 Mega rads Pomona Box 30 meter Coax Power Supply V out = 20 1 Ω 330 2 Watts ~ 0.070 Amps DMM DC mV Reading = ~ 0.035 Amps @ 50% Duty Cycle Source Drain HEMT Pulse Generator 0.1 – 2 MHz 50 % Duty Cycle 0 to -5 V Gate 100 . 50 Ω Terminator 2 Shorted FETs S Powered FET D GND G Parts are still activated after 2 months July 28. 2009 FET Setup for Proton Radiation Exposure @ LANSCE

27. IR’s basic current GaN-on-Si based device structure is a high electron mobility transistor (HEMT), based on the presence of a two dimensional electron gas (2DEG) spontaneously formed by the intimacy of a thin layer of AlGaN on a high quality GaN surface as shown in Figure 1. It is obvious that the native nature of this device structure is a HFET with a high electron mobility channel and conducts in the absence of applied voltage (normally on). Several techniques have been developed to provide a built-in modification of the 2DEG under the gated region that permits normally off behavior. Aside from providing high quality, reliable and a low-cost CMOS compatible device manufacturing process, the GaNpowIR technology platform also delivers dramatic improvements in three basic figures of merit (FOMs), namely specific on-resistance RDS(on), RDS(on)*Qg and efficiency*density/cost.

28. Intel won’t disclose any details till product is announced

29. Conclusions • Learned from commercial Devices, Companies & Power conferences • Can get high Radiation Tolerance & Higher Voltage • High Frequency > Smaller Air coil > Less Material • Goal: ~20 MHz Buck, MEM on Chip size 9 mm x 9mm • Power SOC: MEMs Air Core Inductor on Chip • Study Feasibility 48 / 300V Converters • Irradiation: Run @ Max operating V & I. • Limit Power Dissipation by Switching duty cycle • Online Monitoring during irradiation for faster results • Yale Plug Cards can be loaned for Evaluation • Collaborators are Welcome

30. Working on Power Supply Is not Glamorous Neither it on Top of the World The End