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New generations of RF Amplifiers : from system requirements to technologies Michel Caplot, Christian Robert, Michel Grezaud, Bernard Darges and Pascal Ponard cw RF Workshop – CERN – March 2008. System requirements (1). From System requirements to Technologies….and not the opposite way
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New generations of RF Amplifiers:from system requirements to technologiesMichel Caplot, Christian Robert, Michel Grezaud, Bernard Darges and Pascal Ponardcw RF Workshop – CERN – March 2008 Components & Subsystems
System requirements (1) • From System requirements to Technologies….and not the opposite way • System requirements do include technical performance but are not limited to these performance • Systems requirements should cover system life time • Cost of a system is not limited to purchasing cost: it clearly include Life Cycle Costs (LCC) • Purchasing cost • Maintenance cost • System evolution cost • Supplier support cost • Spare part cost • …… Components & Subsystems
System requirements (2) • Systems Requirements • Technical performance • LCC including availability of spare parts over 2 or 3 decades • System architecture • System reliability • System availability (fault tolerance, graceful degradation, maintainability, testability, …) Components & Subsystems
Architectures (1) High power Few items to maintain Centralized architecture Large klystron based RF amplifiers Lower power at each stage Easy replacement Decentralized architecture with local control Multi-IOT based RF amplifiers Components & Subsystems
Architectures (2) Coupling losses Graceful degradation Easy replacement Multi-coupled IOT based RF amplifiers Coupling losses Low voltage Obsolescence management Multi-coupled Solid State based RF amplifiers Components & Subsystems
Architectures (3) • Architecture should not take into account technologies • Architecture is strongly dependent on requirements • Solid State vs. Electron Device architectures : really a debate ? In both cases, experienced high power RF designers are mandatory !!! Components & Subsystems
Electron device evolution - Klystrons & IOTs (1) Scientific Accelerators & Fusion IOTs µs Klystrons Radiotherapy Security Industry MBK Klystrons 10 MW Pulsed Klystrons 1 MW Defense CW Klystrons <P> 100 kW IOT f 10 kW EIK Broadcast 1 kW Ppeak 100 GHz 1 GHz 10 GHz Components & Subsystems
Electron device evolution – Triodes & Tetrodes (2) Triodes & Tetrodes Diacrodes Scientific Accelerators & Fusion 1 MW Diacrodes Radio Induction 100 kW Scientific Accelerators Triodes & tetrodes Laser TV 10 kW 1 GHz 1 MHz 10 MHz 100 MHz Components & Subsystems
Si/SiC/GaN 1 MW Si/GaAs PWM (S class) C (D) class 1 kW AB class C class PWM (S-class) A class E class F class AB class 1 W 1 MHz 1 GHz Electron device evolution – Solid State Device (3) Solid State amplifiers Components & Subsystems
The end capacitance is mainly done in this area 1 1 1 G G G 2 2 2 G G G A A A K K K 1 1 1 1 G G G G 2 2 2 2 G G G G A A A A K K K K Cathode Control Grid K K K K A A A A G G G G 2 2 2 2 G G G G 1 1 1 1 Screen Grid Anode K K K A A A G G G 2 2 2 G G G 1 1 1 One Diacrode Diacrode - A major evolution for tetrode technology (1) 1 1 G G 2 2 G G A A K K K K A A G G 2 2 G G 1 1 Two tetrodes Components & Subsystems Fig 18 TH 628 Diacrode
Diacrode - A major evolution for tetrode technology (2) VSWR = 2.0:1 cw Power - MW Frequency - MHz Both tubes with the same cathode Components & Subsystems
Solid State – Amplifier Class of Operation Impact (1) Si MOSFET Technology Thales new design 100% D 98% 80% 75% C Amplifier Class of operation Efficiency, % 65% B 55% AB A 25% 0.1 1 10 13 27 100 500 Frequency, MHz Components & Subsystems
Solid State – Amplifier structure Impact (2) Si LDMOS Technology (low frequency) 10 kW Complete rack Pallet No required tuning or adjustment 90 % SMT technology Last MOSFET technology RoHS compliance Case Racks 600 W Complete rack In case of component technology evolution, Pallets are changing but not Case Interface and not Racks Components & Subsystems
Solid State – GaN device for high frequency (3) KORRIGAN : a GaN foundry for Europe GaN TECHNOLOGY • RF power density x 10 • Output power x 10 • Power added efficiency x 2 • Junction temperature > 250°C • Voltage supply > 28V Components & Subsystems
CTH, ISOM, CIDA, PTO U.Roma TV, CNR IFN System HousesELT, SELEX, Thales, Indra, EMW, SAAB, BAE ISOM TNO GaN HEMT Foundries SELEX, UMS (<-Tiger), QinetiQ GaN epi-wafers Picogiga, QinetiQ TNO, IRCOM, CTH U.Padova, ISOM, CIDA NORSTEL LiU, Tiger, ULE Solid State – GaN device for high frequency (4) KORRIGAN : a GaN foundry for Europe Delivery Final Product Assembly Test Die Bank Process Epitaxy Substrates Components & Subsystems
IOTs – Modularity based design (1) TH713 IOTs L band 16 kW cw Diamond TH793 IOTs 450-850 MHz 80 kW cw Components & Subsystems
Combined RF Output Coupling cavity IOTs – Modularity based design (2) Modularity allows for Fault tolerance through graceful degradation, due to the operation of each RF source at a lower power: in case of one source failure, two remaining can supply full power Components & Subsystems
Conclusion New generations of RF amplifiers should be defined by System Requirements that include technical performance but also system operation requirements and Life Cycle Costs (and not only Purchasing Cost) There is not a debate between Solid State and Electron devices: based on system requirements, technological answers may be based on a unique type or on a combination of technologies Both Solid State and Electron devices have evolutions. SSD design based amplifier must incorporate an architecture that allows to mix different solid state technologies in order to take into account that science is not the market driver Components & Subsystems