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APh 183: Physics of Semiconductors and Semiconductor Devices

TEM cross-section of a 10nm transistor. APh 183: Physics of Semiconductors and Semiconductor Devices. Tuesday & Thursday, 9-10:30 am 104 Watson. Instructor: H.A. Atwater Complement # 1: Gallium Nitride and III-Nitride Semiconductors. III-Nitride Semiconductors.

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APh 183: Physics of Semiconductors and Semiconductor Devices

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  1. TEM cross-section of a 10nm transistor APh 183: Physics of Semiconductors and Semiconductor Devices Tuesday & Thursday, 9-10:30 am 104 Watson Instructor: H.A. Atwater Complement #1: Gallium Nitride and III-Nitride Semiconductors

  2. III-Nitride Semiconductors

  3. Evolution of Luminous Efficiency by Technology

  4. GaN Bandstructure (Wurtzite Phase)

  5. GaN Mobility and Scattering

  6. GaN: Hydrogen Passivation of Dopants

  7. GaN Properties

  8. GaN Field Effect Transistors

  9. GaN as a Power Device Material

  10. GaN: Typical Blue LED Structure

  11. GaN/Sapphire Growth

  12. Dislocation Density Effects on Internal Quantum Efficiency and Device Lifetime

  13. GaN Defect Reduction via Lateral Epitaxial Growth

  14. Light Extraction Critically Dependent on Layer Thickness Control

  15. Photonic Crystals Improve Light Emission Directivity

  16. LED Spectral Luminous Efficiency vs. Eye Response

  17. White Light Generation via Phosphor Down-Conversion and RGB Color Mixing

  18. CdSe Quantum Dot Phosphors for White LEDs

  19. Examples of LED Packaging Schemes

  20. GaN LED Package

  21. Device Structure for UV LED

  22. Thin Metal Contact Important to UV LEDs

  23. LED Applications Lighting Traffic Signals Displays University of Strathclyde Institute of Photonics

  24. HBLED Market

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