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Interplay of Quantum Size Effect and Classical Strain Effect on Growth of Nanoscale Metal Thin Films Feng Liu, University of Utah, DMR 0909212. (a). z. g 0 Q ( d ) s Q ( d ). We developed a theory underlying the relationship between quantum size effect
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Interplay of Quantum Size Effect and Classical Strain Effecton Growth of Nanoscale Metal Thin Films Feng Liu, University of Utah, DMR 0909212 (a) z g0Q(d)s Q(d) • We developed a theory underlying the relationship between quantum size effect • (QSE) and classical strain effect on the stability of metal nanofilms in the quantum regimes, which has been validated and confirmed by first-principles calculations. • Introduce the concept of “quantum stress” to elucidate extrinsic electronic effects, e.g. QSE on the stress state of nanofilms and solids. • Develop the theoretical framework to describe the interplay of QSE and strain effect on the stability of metal nanofilms (fig. (a)). • Perform first-principles calculations of quantum oscillations in the surface stress of Pb(111) nanofilms (fig.(b)). • Predict stability of Pb(111) nanofilms under strain conditions. yn d (b)
Interplay Between Quantum Size Effect and Strain Effect on Growth of Nanoscale Metal Thin Films Feng Liu, University of Utah, DMR 0909212 • One graduate student (Miao Liu) has been trained research-wise in the area of epitaxial growth of metal nanofilms, and technically in performing extensive first-principles calculations of Pb(111) thin-film stability in the quantum regime as proposed. • As a MWN program, the graduate student, Miao Liu, visited Prof. Q.K. Xue group in the Physics Department of Tsinghua University for three months as part of the planned MWN international collaboration. • Some of our recent research results are being incorporated into a course of “computational materials science” taught by PI at University of Utah • PI is serving on the organizing committee of the Richmond Conference "International Symposium on Clusters and Nanostructures" (ISCAN) to be held in Richmond, VA during November 7-10, 2011.