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Crystallization of Thin Films under Spatial Confinement

Crystallization of Thin Films under Spatial Confinement. Sally Jiao, Anna Hailey Rubinstein, Lynn Loo Loo Group: Organic and Polymer Electronics Laboratory Princeton University. Organic semiconductors. Characteristics : Easy to process Inexpensive Applications: Flexible displays

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Crystallization of Thin Films under Spatial Confinement

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  1. Crystallization of Thin Films under Spatial Confinement Sally Jiao, Anna Hailey Rubinstein, Lynn Loo Loo Group: Organic and Polymer Electronics Laboratory Princeton University

  2. Organic semiconductors • Characteristics: • Easy to process • Inexpensive • Applications: • Flexible displays • Solar cells http://images.dailytech.com/nimage/29214_large_main.JPG

  3. TES-ADT crystallization Number and orientation of crystalline grains affect charge transport How do various factors affect TES-ADT’s crystallization behavior? How does changing film thickness affect crystallization behavior? 1 Lee, Stephanie. (2012). Processing-Structure- Function Relationships In Solution-Processed , Organic-Semiconductor Thin Films for Transistor Applications. Ph.D. Thesis. Princeton University.: US.

  4. TES-ADT (triethylsilylethynylanthradithiophene) Small-molecule organic semiconductor Dissolves easily in toluene TES-ADT crystals TES-ADT solution Amorphous TES-ADT film Crystallized TES-ADT film Dissolve in toluene Spin coat onto a silicon dioxide wafer Expose to solvent vapor Lee, Stephanie. (2012). Processing-Structure- Function Relationships In Solution-Processed , Organic-Semiconductor Thin Films for Transistor Applications. Ph.D. Thesis. Princeton University.: US.

  5. Quantifying crystallization behavior Nucleation density Growth rate 0.2 nuclei/mm2 17 +/- 1 um/s

  6. Results: growth rate v. thickness

  7. Results: growth rate v. thickness 100nm, 12um/s 130nm, 27um/s

  8. Results: nucleation density v. thickness 29nm 75nm 120nm

  9. Results: nucleation density v. thickness no nucleation instantaneous nucleation progressive nucleation y = 3.0x – 310 y = 0.042x – 2.0

  10. Summary • Found that increasing film thickness increases nucleation density, nucleation “rate”, and crystallization growth rate • Could use these results to produce patterned films for electronic device applications • Experienced research in an academic setting • Developed practical lab skills • Reinforced my interest in materials science research with real world applications

  11. Acknowledgments

  12. Additional material

  13. Results: growth rate v. thickness PFBT-Au HMDS-SiO2 Au SiO2 UVO-SiO2 UVO-Au

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