Benchmark Logic Level Gate Drive MOSFETs

1. PRESS RELEASE Benchmark Logic Level Gate Drive MOSFETs DATA SHEETS This new 40V to 100V family of benchmark MOSFETs utilizes the latest IR trench technology making these devices ideal for high current DC/DC switching applications and high current DC motor drive applications. The low RDS(on) helps improve thermal efficiency that is crucial to any high current design. The low VGS gate drive capability allows the MOSFETs to be driven from a microcontroller or weak battery. Low VGS operation also allows better efficiency at light load conditions due to reduced gate charge. HI-RES GRAPHIC MOSFET HOME PAGE • Advantages • The new 40V-100V family of MOSFETs is available in all standard power packages such as TO-220, D2PAK, TO-262 and the robust 7 pin D2PAK. • In addition to low RDS(on) this family of MOSFETs offers a package current rating of 195A for TO-220, D2PAK and TO-262. This is more than 60% improvement from typical package ratings. • The 7 pin D2PAK reduces RDS(on) even further by as much as 16% over a standard D2PAK and has a package ID rating of 240A which makes it one of the most rugged surface mount packages on the market. • The higher current rating from these packages can provide more guard band from unwanted transients or help reduce part count in paralleled typed topologies that require many MOSFETs to share high current. • Features • Optimized for Logic Level Drive • Very low RDS(on) at 4.5V VGS • Superior R*Q at 4.5V VGS • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche SOA • Enhanced body diode dV/dt and di/dt capability • Lead free March 16, 2009