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Cypress Introduces the Industry’s Fastest High-Density NVRAM Solution

16Mb nvSRAM New Product Introduction. Cypress Introduces the Industry’s Fastest High-Density NVRAM Solution. 16Mb nvSRAM New Product Introduction (Engineering). Demand for Better Performance Is Driving Nonvolatile RAM Growth.

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Cypress Introduces the Industry’s Fastest High-Density NVRAM Solution

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  1. 16Mb nvSRAMNew Product Introduction Cypress Introduces the Industry’s Fastest High-DensityNVRAM Solution 16Mb nvSRAM New Product Introduction (Engineering)

  2. Demand for Better Performance Is Driving Nonvolatile RAM Growth • The Global TAM1 for Nonvolatile RAM (NVRAM) is forecast to be $590M in 20142 with a 10% CAGR through 2018 • Cypress’s 16Mb NVRAM applications: • Industrial Automation • Computing and Networking • Avionics and Defense • Electronic Gaming • Customers in these markets make high-performance systems that require instant and reliable data capture on power loss • Customers prefer battery-free and energy-efficient systems • Some customers require ONFI3-compatible NVRAM interfaces • The current solution, Battery-Backed SRAM, cannot meet any of these requirements • Take advantage of the upcoming sea change from Battery-Backed SRAM to NVRAM • 1 Total Available Market • 2 Web-Feet Research • 3 Open NAND Flash Interface Standard 16Mb nvSRAM New Product Introduction (Engineering) 3a

  3. Cypress Is the NVRAM Market Leader Cypress offers the largest portfolio of serial and parallel Nonvolatile Random-Access Memory products F-RAM™, the industry’s most energy-efficient serial NVRAMs nvSRAM, the industry’s fastest parallel NVRAMs Cypress offers a broad portfolio of the industry’s most energy-efficient and reliable F-RAM products F-RAM consumes 30% of the power of the most advanced EEPROM and offers 100 million times the endurance F-RAM densities range from 4Kb to 4Mb, with supply voltages from 2.0 V to 5.5 V SPI and I2C serial F-RAM products come in SOIC8, DFN8 and EIAJ packages Real-time clocks and counters are also available on F-RAM products Cypress offers a wide range of the industry’s fastest parallel nvSRAM products Access times range from 20 ns to 45 ns with unlimited read/write cycle endurance Densities range from 64Kb to 16Mb with 3.0-V and 5.0-V supply voltages and 1.8-V I/O voltages Asynchronous x8, x16 and x32 SRAMs come in a wide variety of packages Integrated real-time clocks are also available on nvSRAM products Cypress: Was first to produce F-RAM and nvSRAM products and has more than 25 years of experience Continues to invest heavily in new products Is committed to providing products that meet the most rigorous automotive and military standards Assures long-term supply of F-RAM and nvSRAM products Has shipped more than 1 billion NVRAM units Cypress offers the industry’s fastest, most energy-efficient, highest-reliability NVRAM solutions to capture and protect the world’s most critical data 16Mb nvSRAM New Product Introduction (Engineering) 3b

  4. Parallel Nonvolatile Memory Terms • Nonvolatile Memory (NVM) • Memory that retains data on power loss • Nonvolatile Random-Access Memory (NVRAM) • A Nonvolatile Memory that allows direct access to stored data in any random order • Write Endurance • The number of times a Nonvolatile Memory cell can be rewritten before it wears out • Silicon Oxide Nitride Oxide Silicon (SONOS) • A transistor with a polysilicon gate (S), an Oxide Nitride Oxide (ONO) gate dielectric and a Silicon substrate (S) used to create a Nonvolatile Memory storage cell • Nonvolatile Static Random-Access Memory (nvSRAM) • Fast SRAM memory with a SONOS Nonvolatile Memory cell embedded in each SRAM cell to retain data on power loss • Open NAND Flash Interface (ONFI) Standard • An open interface standard that assures the compatibility and interoperability of NAND devices from different vendors • Battery-Backed SRAM (BBSRAM) • SRAM memory connected to a battery to retain data on power loss • Restriction of Hazardous Substances (RoHS) • A European Union directive intended to eliminate the use of environmentally hazardous material in electronic components • Redundant Array of Independent Disks (RAID) • A storage technology that uses two or more disk drives for redundancy 16Mb nvSRAM New Product Introduction (Engineering) 4

  5. Parallel NVM Design Problems • 1. Many systems require fast Nonvolatile Memories with high Write Endurance • Traditional EEPROM and flash Nonvolatile Memories have slow write times (>1 ms) and limited Write Endurance • Low-power asynchronous SRAMs have fast, ~45-ns access times but require battery backup to store data on power loss • Most NVRAMs do not offer an ONFI Standard, making them incompatible with many controllers • 2. Conventional BBSRAM solutions force undesirable trade-offs • Batteries require power-management circuits and firmware, which add system cost and increase complexity • Coin cell batteries reduce reliability and have a limited lifetime, which mandates system maintenance and downtime • Data is lost if the battery charge is drained before system power is restored, which mandates fast time-to-repair • Batteries contain heavy metals that violate RoHS regulations • 3. Many systems require accurate time-stamping and instant capture of large amounts of data • The accurate external real-time clock chips used to time-stamp data add cost and complexity • Conventional NVRAMs with more than 8Mb capacity are limited to 35-ns to 100-ns access times • Cypress’s 16Mb nvSRAM solves all these problems • Provides 25-ns read/write access time with unlimited Write Endurance • Offers both high-speed asynchronous parallel and ONFI Standard 1.0-compatible interfaces • Requires no batteries to retain data on power loss for unlimited periods, thus meeting RoHS regulations • Stores data reliably on power loss without the need for external power-management circuits and firmware • Offers an integrated, high-accuracy real-time clock The Cypress 16Mb nvSRAM is the industry’s fastest high-density NVRAM. It reduces system cost and complexity by eliminating batteries and clock chips. 16Mb nvSRAM New Product Introduction (Engineering) 5

  6. Parallel nvSRAM Is a Better Solution Simplify a complex BBSRAM-based design… By choosing nvSRAM as your parallel Nonvolatile Memory solution… To produce more reliable solutions for mission-critical applications at a lower cost. Standard SRAM memory Industrial Automation Computing and Networking Avionics and Defense Electronic Gaming Battery required to retain data on power loss Battery-free parallel nvSRAM solution Extra board area for battery 16Mb nvSRAM New Product Introduction (Engineering) 6

  7. Cypress 16Mb NVRAM Solution vs.Competition’s 1 Low-power 16Mb asynchronous SRAM 2 Conditions: Max current, x16, 45 ns (nvSRAM), 45 ns (asynchronous SRAM), 45 ns (MRAM), 2.7 to 3.6 V, −40°C to +85°C 3 Based on the typical life span of a backup battery 4 An MRAM can be corrupted by the magnetic fields encountered near motors and solenoids 16Mb nvSRAM New Product Introduction (Engineering) 7

  8. nvSRAM PortfolioHigh Density | High Speed CY14V116F/G 16Mb; 3.0, 1.8 V I/O 30 ns; ONFI3 1.0 x8, x16; Ind1 CY14B116R/S 16Mb; 3.0 V 25, 45 ns; x32; Ind1 RTC2 Higher Densities DDRx6nvSRAM NDA Required Contact Sales Higher Densities QSPI5nvSRAM NDA Required Contact Sales CY14B108K/L 8Mb; 3.0 V 25, 45 ns; x8; Ind1 RTC2 CY14B108M/N 8Mb; 3.0 V 25, 45 ns; x16; Ind1 RTC2 CY14B116K/L 16Mb; 3.0 V 25, 45 ns; x8; Ind1 RTC2 CY14B116M/N 16Mb; 3.0 V 25, 45 ns; x16; Ind1 RTC2 512Kb - 16Mb CY14V101PS 1Mb; 3.0, 1.8 V I/O 108 MHz QSPI5; Ind1 Ext. Ind7; RTC2 CY14V101QS 1Mb; 3.0, 1.8 V I/O 108 MHz QSPI5; Ind1 Ext. Ind7 NEW NEW CY14B104K/LA 4Mb; 3.0 V 25, 45 ns; x8; Ind1 RTC2 CY14V104LA 4Mb; 3.0, 1.8 V I/O 25, 45 ns; x8; Ind1 CY14B104M/NA 4Mb; 3.0 V 25, 45 ns; x16; Ind1 RTC2 CY14V104NA 4Mb; 3.0, 1.8 V I/O 25, 45 ns; x16; Ind1 CY14B101I 1Mb; 3.0 V 3.4 MHz I2C; Ind1 RTC2 CY14B101KA/LA 1Mb; 3.0 V 25, 45 ns; x8; Ind1RTC2 CY14V101LA 1Mb; 3.0, 1.8 V I/O 25, 45 ns; x8; Ind1 CY14B101MA/NA 1Mb; 3.0 V 25, 45 ns; x16; Ind1 RTC2 CY14V101NA 1Mb; 3.0, 1.8 V I/O 25, 45 ns; x16; Ind1 CY14B512P 512Kb; 3.0 V 40 MHz SPI; Ind1 RTC2 CY14B512I 512Kb; 3.0 V 3.4 MHz I2C; Ind1 RTC2 CY14B101P 1Mb; 3.0 V 40 MHz SPI; Ind1 RTC2 CY14B256KA/LA 256Kb; 3.0 V 25, 45 ns; x8; Ind1 RTC2 CY14V/U256LA 256Kb; 3.0, 1.8V I/O 35 ns; x8; Ind1 CY14E256LA 256Kb; 5.0 V 25, 45 ns; x8; Ind1 STK14C88-5 256Kb; 5.0 V 35, 45 ns; x8; Mil4 CY14B256P 256Kb; 3.0 V 40 MHz SPI; Ind1RTC2 CY14B256I 256Kb; 3.0 V 3.4 MHz I2C; Ind1 RTC2 64Kb - 256Kb STK11C68-5 64Kb; 5.0 V 35, 55 ns; x8; Mil4 STK12C68-5 64Kb; 5.0 V 35, 55 ns; x8; Mil4 CY14B064P 64Kb; 3.0 V 40 MHz SPI; Ind1 RTC2 CY14B064I 64Kb; 3.0 V 3.4 MHz I2C; Ind1 RTC2 Production Sampling Development Concept Status 4 Military grade −55ºC to +125ºC 5 Quad serial peripheral interface 6 Double Data Rate 7 Extended Industrial grade −40ºC to +105ºC 1 Industrial grade −40ºC to +85ºC 2 Real-time clock 3 Open NAND flash interface Availability QQYY QQYY 16Mb nvSRAM New Product Introduction (Engineering)

  9. 16Mb Parallel nvSRAM Applications Block Diagram Industrial automation Computing and networking Avionics and defense Electronic gaming VCAP4 16 Mb Parallel nvSRAM Power Control SONOS Array Store SRAM Array 3 Control Logic Store/Recall Control Control Features HSB5 Async parallel interface: 25-ns access time, x8, x16, x32 buses ONFI Standard 1.0: 30-ns access time, x8 and x16 bus widths Unlimited read/write endurance One million store cycles on power fail Data retention of 20 years at 85ºC and 150 years at 65ºC Operating voltages: 3.0 V, 5.0 V; 1.8 V I/O Low standby (750 µA) and sleep (10 µA) currents Integrated, high-accuracy real-time clock (RTC) Industrial grade temperature Packages: 44-TSOP II, 48-TSOP I, 54-TSOP II, 165-FBGA x32 I/O Control Data Recall Address Decoder Software Command Detect XIN1 RTC XOUT2 INT3 x21 Address Availability Collateral Sampling: Now Production: Now Final Datasheet: 16Mb nvSRAM 1 Crystal connection input 2 Crystal connection output 3 Interrupt output/calibration/square wave 4 External capacitor connection 5 Hardware Store busy 16Mb nvSRAM New Product Introduction (Engineering) 11

  10. Here’s How to Get Started • Download the App Note: A Comparison Between nvSRAMs and BBSRAMs • Register to access online technical support: http://secure.cypress.com/myaccount/ • Download the final datasheet: 16Mb nvSRAM Programmable Logic Controller by Siemens Router by Cisco Avionics Subsystem by Rockwell Collins Electronic Gaming Machine by IGT 16Mb nvSRAM New Product Introduction (Engineering) 12

  11. APPENDIX 16Mb nvSRAM New Product Introduction (Engineering) 15

  12. nvSRAM Product Selector Guide 16Mb nvSRAM Part Numbering Decoder CY14X116XX – XXXXXXX Temperature Range: I = Industrial Pb Content: X = Pb-free Access Time: 25 = 25 ns, 30 = 30 ns, 45 = 45 ns Package: ZS = 44-TSOP II, Z = 48-TSOP I, ZSP = 54-TSOP II, BZ = 165-FBGA Interface: Blank = Async Parallel, 7 = ONFI 1.0 Bus Width: L = x8, N = x16, S = x32, F = x8 NAND, G = x16 NAND Density: 116 = 16Mb nvSRAM Voltage: B = 3.0 V, E = 5.0 V, V = 3.0 V, 1.8 V I/O Marketing Code: 14 = nvSRAM Company ID: CY = Cypress 16Mb nvSRAM New Product Introduction (Engineering) 16

  13. References and Links • Cypress Nonvolatile Products website: www.cypress.com/nonvolatile • The source for all publicly available Nonvolatile Product documentation and collateral • Cypress Nonvolatile Products roadmap: Cypress Nonvolatile RAM Roadmap • For datasheets and NDA roadmap requests, contact yourCypress Sales Representative or email nvsram@cypress.com • Application Notes: Nonvolatile Products Application Notes • Knowledge Base Articles: Nonvolatile Products Knowledge Base Articles • Cypress nvSRAM Solution Examples: Cypress nvSRAM Solution Examples 16Mb nvSRAM New Product Introduction (Engineering) 18

  14. $10.50 $2.12 $3.70 $5.82 $9.93 $2.40 -$0.22 $0.12 $12.23 $28.55 16Mb nvSRAM Solution Value Competitor Low-Power SRAM: Renesas R1LV1616RSA-5SI Price: $10.501 BOM Integration Battery + casing: Panasonic CR2477 + Memory Protection Devices Inc. BH1000G-ND casing Price: $2.121 Power management circuit: Maxim MXD1210ESA Price: $3.702 Additional Value Field battery replacement cost3: Value Added: $9.93 Industry’s fastest access time (25 ns): Value Added: $2.40 External capacitor: 22 µF, 6.3 V, tantalumValue Lost: -$0.223 Board space saving: Value Added: $0.124 Competitor Battery + Casing Power Management Circuit BOM Integration Value Field Battery Replacement Faster Access Time External Capacitor Board Space Saving Total Additional Value Total Value Delivered Target Cypress Solution: Total Cost: 12% Total Savings: CY14B116N-Z25XI $25.12 $3.43 1 1 Ku web pricing from Digikey 2 Supplier web pricing3 $5.76 (four times in 15 years at $1.44 per battery), plus labor cost: $4.17 (four times in 15 years with labor at $50/hour and replacement time estimated at 75 seconds/battery)4 12.25 square centimeters at $0.01 per square centimeter on an eight-layer PCB 16Mb nvSRAM New Product Introduction (Engineering) 19

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