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This study explores the transitions in the p-type region and quantum well active region of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). The analysis reveals two distinct peaks associated with these transitions, particularly highlighting the impact of Mg activation energy in GaN. The concentration of holes decreases rapidly due to high Mg activation energy, while electron concentration in the p-type region increases with decreasing temperature, enhancing Mg-related transitions at lower temperatures. To elucidate the recombination processes in InGaN/GaN MQW LEDs, rate equations are formulated to couple hole concentrations in the p-type layer and quantum well. The activation energy of Mg in GaN films is estimated to be around 126 meV based on the Arrhenius plot.
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Conclusion There are two peaks which are associated with thetransitions in the p-type region (P1) and the quantum wellactive region (P2), respectively. the hole concentration decreases rapidlydue to the high activation energy of Mg in GaN.i.e. ectrons, in the p-type region increasewith decreasing temperature, the Mg-related transition is enhancedat low temperature. Since the radiativerecombination is limited by the holes available, rate equations are set up to couple the hole concentrations in the p-type layer and quantum well to depict the recombination processes in an InGaN/GaNMQW LED. Mg in GaN films to be about 126 meVfrom the Arrhenius plot
