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Conclusion

Conclusion. There are two peaks which are associated with the transitions in the p-type region (P1) and the quantum well active region (P2), respectively.

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Conclusion

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  1. Conclusion There are two peaks which are associated with thetransitions in the p-type region (P1) and the quantum wellactive region (P2), respectively. the hole concentration decreases rapidlydue to the high activation energy of Mg in GaN.i.e. ectrons, in the p-type region increasewith decreasing temperature, the Mg-related transition is enhancedat low temperature. Since the radiativerecombination is limited by the holes available, rate equations are set up to couple the hole concentrations in the p-type layer and quantum well to depict the recombination processes in an InGaN/GaNMQW LED. Mg in GaN films to be about 126 meVfrom the Arrhenius plot

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