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Intermag – MMM 2010

Intermag – MMM 2010. Huanlong Liu. Outline. CA – 05 CA - 08. Current induced switching of hard layer in perpendicular nanopillars. I. Tudosa [1] , J.A.Katine [2], S.Mangin [3] and E.E Fullerton[1] [1]: Center for Magnetic Recording Research, UC San Diego, La Jolla, CA

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Intermag – MMM 2010

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  1. Intermag – MMM 2010 Huanlong Liu

  2. Outline • CA – 05 • CA - 08

  3. Current induced switching of hard layer in perpendicular nanopillars I. Tudosa[1], J.A.Katine[2], S.Mangin[3] and E.E Fullerton[1] [1]: Center for Magnetic Recording Research, UC San Diego, La Jolla, CA [2]: San Jose Research Center, Hitachi Global Storage Technologies, San Jose, CA [3]: Institut Jean Lamour, Nancy – Universite, Nancy, Vandauvre les Nancy, France CA – 05

  4. Sample structure and result Pin free layer, do pulse measurement of Amplitude ~ Switching Probability in thermal regime to get energy barrier. Elipse: 90 nm x 180 nm Rap ~ 2.26 Ω, Rp~ 2.22 Ω, MR ~2% (0.3% ours) Hc = 0.1 T Ic = 1 mA / -2 mA

  5. Reproducible trajectory in sub ns spin transfer switching for MgO based magnetic tunnel junctions under zero biasing T. Aoki[1], Y. Ando[1], M. Oogane[1] and H. Naganuma[1] [1] Department of Applied Physics, Tohoku University, Sendai, Japan CA – 08

  6. Sample structure and results Pusel rise time ~ 50 ps free Switching boundary on t ~ I plot: Time range (s): 10 e -10 ~ 1 (onlye one point for t > 100 ns) T ~ switching probability plot barrier Switching probability pinned duration Anti-ferromagnetic I ~ switching probability for different time: @ 10 ns : sp increases with I. @0.4 ns: switching probability oscillates

  7. Thank you!

  8. single-shot time-domain studies of spin-torque-driven switching in magnetic tunnel junctions Y. Cui[1], G.Finocchio[2], C.Wang[1],J.A.Katine[3], R.A.Buhrman[1] and D.C.Ralph[1] [1]: Cornell University, Ithaca, NY; [2]: University of Messina, Messina, Italy; [3]: Hitachi Global Storage Technologies, San Jose, CA CA – 07

  9. An Experimental Technique to measure small signals • Background signal >> signal needed to be measured Sample Signal generator Tee Tee Attenuate / reverse

  10. A study of DC driven Microwave dynamics in magnetic tunnel junction P. Gowtham[1] [1]: Cornell University, Ithaca, NY CA – 09

  11. Break down test • CoFe / CoFeB – free layer • 55 nm x 100 nm • TMR ratio = 80% • Break down voltage: 475 – 500 mV (hard) / 275 – 400 mV (soft) • Have asymmetry in B ~ f phase diagram.

  12. Spin-transfer magnetization switching in full-Heusler Co2FeAl0.5Si0.5 / Ag / Co2FeAl0.5Si0.5 epitaxial nanopillars H. Sukegawa[1], S. Kasai[1], T. Furubayashi[1]. S. Mitani[1] and K. Inomata[1] [1]: Magnetic Material Center, National Institute for materials Science(NIMS), Tsukuba, Ibaraki, Japan CA – 10

  13. Structure and results

  14. Spin transfer torque switching in perpendicular magnetic tunnel junctions using L10-ordered FePd electrodes T. Daibou[1], M. Yoshikawa[1], E. Kitagawa[1], T. Nagase[1], K. Nishiyama[1], M. Nagamine[1], M. Amano[1], M. Nakayama[1], T. Kai[1], T. Kishi[1] and H. Yoda[1] [1]: Corporate Research & Development Center, Toshiba Corporation, Yokohama, Japan

  15. Structure and resutls α = 0.01 – 0.03, Ku > 1e7erg / cc, annealed @ 400 °C Bc = 0.3 ~ 0.7 T R Ic / Δ -9 11 40 60 I / μA d / nm

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