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V FB = 1/q (  G -  S )

V FB = 1/q (  G -  S ). (includes semiconductor and oxide components). (position of the Fermi level). (the amount of “band bending”). -. -. -. V FB = - V bi. EC (intrinsic). D Eg. EF. available impurity band states. filled impurity band states. EC (degenerate) ~ ED.

virginia-hutchinson
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V FB = 1/q (  G -  S )

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  1. VFB = 1/q (G- S)

  2. (includes semiconductor and oxide components) (position of the Fermi level) (the amount of “band bending”) - - - VFB= - Vbi

  3. EC (intrinsic) DEg EF available impurity band states filled impurity band states EC (degenerate) ~ ED apparent band gap narrowing: DEg* (is optically measured) Eg* is the apparent band gap: an electron must gain energy Eg* = EF-EV EV - Degenerate Semiconductors As the doping conc. increases more, EF rises above EC

  4. Quantum Effects on Threshold Voltage

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