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EE5342 – Semiconductor Device Modeling and Characterization Lecture 29 - Spring 2004

Explore MOSFET device structure, equivalent circuit elements, circuit parameters, channel length modulation, and substrate bias effects. Gain knowledge on SPICE MOSFET models and their levels. References provided for further study.

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EE5342 – Semiconductor Device Modeling and Characterization Lecture 29 - Spring 2004

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  1. EE5342 – Semiconductor Device Modeling and CharacterizationLecture 29 - Spring 2004 Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/

  2. MOSFET DeviceStructre Fig. 4-1, M&A*

  3. MOSFET equivalentcircuit elements Fig 10.51*

  4. n-channel enh.circuit model G RG Cgd RDS Cgs RD S D Cbd RB Cbs Idrain Cgb DSS DSD RB B

  5. MOS small-signal equivalent circuit Fig 10.52*

  6. MOSFET circuitparameters

  7. MOSFET circuitparameters (cont)

  8. Substrate bias effect on VT (body-effect)

  9. Body effect data Fig 9.9**

  10. Fully biased n-channel VT calc

  11. Values for fmswith silicon gate

  12. Q’d,max and xd,max forbiased MOS capacitor Fig 8.11** |Q’d,max|/q (cm-2) xd,max (microns)

  13. I-V relation for n-MOS ohmic ID non-physical ID,sat saturated VDS VDS,sat

  14. MOS channel-length modulation Fig 11.5*

  15. Analysis of channellength modulation

  16. Channel length mod-ulated drain char Fig 11.6*

  17. Associating theoutput conductance ID ID,sat VDS VDS,sat

  18. L = Ch. L. [m] W = Ch. W. [m] AD = Drain A [m2] AS = Source A[m2] NRD, NRS = D and S diff in squares M = device multiplier SPICE mosfet Model Instance CARM*, Ch. 4, p. 290

  19. SPICE mosfet model levels • Level 1 is the Schichman-Hodges model • Level 2 is a geometry-based, analytical model • Level 3 is a semi-empirical, short-channel model • Level 4 is the BSIM1 model • Level 5 is the BSIM2 model, etc.

  20. SPICE ParametersLevel 1 - 3 (Static)

  21. SPICE ParametersLevel 1 - 3 (Static) * 0 = aluminum gate, 1 = silicon gate opposite substrate type, -1 = silicon gate same as substrate.

  22. SPICE ParametersLevel 1 - 3 (Q & N)

  23. References • CARM = Circuit Analysis Reference Manual, MicroSim Corporation, Irvine, CA, 1995. • M&A = Semiconductor Device Modeling with SPICE, 2nd ed., by Paolo Antognetti and Giuseppe Massobrio, McGraw-Hill, New York, 1993. • M&K = Device Electronics for Integrated Circuits, 2nd ed., by Richard S. Muller and Theodore I. Kamins, John Wiley and Sons, New York, 1986. • Semiconductor Physics and Devices, by Donald A. Neamen, Irwin, Chicago, 1997

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