Actividades de I+D enIGFAE/USC

1. Actividades de I+DenIGFAE/USC Pablo Vázquez (IGFAE-USC) IV JORNADAS SOBRE LA PARTICIPACIÓN ESPAÑOLA EN FUTUROS ACELERADORES LINEALES Madrid, 2-3 Diciembre 2009

2. R&D activities at Santiago • R&D in pixel detectors • R&D in microstrip silicon detectors • DEPFET project • Belle II PXD PS system • Sensor characterization (Lab, testbeams) • Gamma irradiation (Co-60) • FTD simulations • Dedicated personnel : 5 FTE • Pablo Vázquez, Abraham Gallas, Daniel Esperante, Jevgenij Visniakov, Carmen Iglesias, Eliseo Pérez, Javier Caride IV jornadas FLC, Madrid, 2-3 Dec 2009

3. R&D in pixel detectors • CERN + LHCb + Timepix/Medipix collaboration • 2 test beams summer 2009 at CERN • Telescope (6) + DUT made with Timepix • 55 um pixel size • 300 um thickness • Hit resolution ~5 um • Track resolution ~2.6 um IV jornadas FLC, Madrid, 2-3 Dec 2009

4. R&D in pixel detectors • Timepix/Medipix collaboration is working in adapting the Timepix ASIC for HEP experiments • Since we have obtained very good results in testbeams • The LHCb VELO upgrade group has decided to choose the timepix as baseline pixel solution • LHCb + Timepix/Medipix has decided to build an upgraded version of the Timepix telescope (funding partially requested to AIDA WP9) IV jornadas FLC, Madrid, 2-3 Dec 2009

5. R&D in pixel detectors • USC in collaboration with the CNM, Glasgow and CERN are building thinned pixel detectors • 2D sensors thinned up to 200, 150 and 100 um • To be readout with the Timepix and characterized as function of the thickness • Charge sharing • Efficiency • Time of arrival measurements • Sensors are being produced now • Bump-bonding tryout also at CNM • Possible design variations under discussion • Elongated pixels at 1st row, edgless, gard rings IV jornadas FLC, Madrid, 2-3 Dec 2009

6. R&D in pixel and microstrips silicon sensors • Telescope based on Timepix with following characteristics • Active area: 2.8x2.8 cm2 • Resolucion: 2 um, 1 ns • Readout rate: 75 kHz • To be used in R&D in detectors for ILC or LHC upgrades with the contribution of the USC • Timing Unit, integration of the DUT daq in the DAQ of the telescope • Mechanics of the DUT • Cold box to work with irradiated sensors in the test beam IV jornadas FLC, Madrid, 2-3 Dec 2009

7. R&D in microstrip silicon detectors • In case the pixel option cannot meet the physics and time scale requirements, the silicon strip option should hold for LHCb VELO upgrade • The strip option should stay as close as possible to the current design improving its performance • 40 MHz readout • Higher granularity (x10 luminosity increase) • Impact Parameter resolution • Radiation hardness • USC wants to participate in the design and characterization of the new sensors, in the module assembly and tests with particle beams at CERN • Very useful for the FTD conception of ILC IV jornadas FLC, Madrid, 2-3 Dec 2009

8. R&D in microstrip silicon detectors • 1 module assembled in Santiago to be tested in the lab and in testbeam • IT hybrid (3 beetles) + 2 pitch adapters + PR01 Hamamatsu sensor IV jornadas FLC, Madrid, 2-3 Dec 2009

9. DEPFET: Belle II PXD PS system • 44 half-modules • 17 voltages per half-module • Regulation cards on radiation and B-field enviroment 22 x half-module 2m 50cm IV jornadas FLC, Madrid, 2-3 Dec 2009

10. DEPFET: Belle II PXD PS system Belle layout 750 voltages 1500 lines ~krad + H field Regul. Regul. DHH DHH PXD PS PS Electronicshut No radiation > 500W IV jornadas FLC, Madrid, 2-3 Dec 2009

11. DEPFET: sensor characterization • Lab test • Gain (radioactive source), charge collection (laser) • Dependence with radiation 241Am sourceon a PXD5 matrix IV jornadas FLC, Madrid, 2-3 Dec 2009

12. DEPFET: sensor characterization • Testbeams • TB09 data taking and analysis • Future testbeams • Irradiated module • Power supply prototype IV jornadas FLC, Madrid, 2-3 Dec 2009

13. DEPFET: 2009 test beam analysis Eutelescopeframeworkinstalled, someprocesorsworking IV jornadas FLC, Madrid, 2-3 Dec 2009

14. Gamma irradiation • Failed depfet PXD5 module irradiation this summer • Module dead before irradiation • PXD5 matrices being tested in Karlsruhe and Santiago Dec 09 up to 10Mrad • PXD6 matrices will be irradiated next year IV jornadas FLC, Madrid, 2-3 Dec 2009

15. ASIC development • In collaboration with Grupo de Vision Artificial at USC a project was submitted to Xunta de Galicia to be produced byTezzaron, using TSVs, a 3D pixel readout chip demonstrator for HEP applications • CMOS 3D 130nm technology • 64x64 pixels of 40x40 um pixel size • 4 layers • Sensor: pn diode • Signal conditioning: amplification, test pulse, comparator • Signal processing: time stamping, counter, time over threshold, 8bit memory • Readout • Possible incorporation of 2 members of this group to the R&D for FLC project in 2013 IV jornadas FLC, Madrid, 2-3 Dec 2009

16. ILC Forward Tracking Disks Simulations • Hit densities have been determined with the new geometry (ILD_00), magnetic field (3.5T) and software for each disk • Baseline 3 inner disks with pixel 4 outer disks with strips • Density: nhit/cm2/BX (1BX=1event) IV jornadas FLC, Madrid, 2-3 Dec 2009

17. ILC Forward Tracking Disks Simulations • Disk segmentation in petals has also been optimized with the constrain of the wafer size • Hit density more uniform than a simple 8 petal/disk segmentation • According to the hit density disk 3 should probably have the same technology than the outer disks IV jornadas FLC, Madrid, 2-3 Dec 2009

18. Summary on R&D activities in the USC • R&D in pixel detectors • R&D in microstrips silicon detectors • DEPFET project • Belle II PXD PS system • Sensor characterization (Lab, testbeams) • Gamma irradiation (Co-60) • FTD simulations IV jornadas FLC, Madrid, 2-3 Dec 2009