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Hall effect (3.8). I=Nqv. B. ÷. +. ÷. +. ÷. f E. f M. ÷. ÷. +. qv. ÷. +. E. x. x. x. x. x. x. x. x. b. V. Gedanken experiment. B. v. f M. ÷. qv. Hall coefficient. Geometry. Characteristics. Gauss tilsvarer Oerstedt som er 80A/m. To akse melexis hall sensor. x.
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I=Nqv B ÷ + ÷ + ÷ fE fM ÷ ÷ + qv ÷ + E x x x x x x x x b V Gedanken experiment B v fM ÷ qv Hall coefficient Geometry
Characteristics Gauss tilsvarer Oerstedt som er 80A/m To akse melexis hall sensor
x x x x x x x x Material characterization Hall coefficient I I B B v qv fM fM ÷ + qv v Polarity of induced voltage can be used to determine the polarity of majority carriers