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Basic Bipolar Process Description

Basic Bipolar Process Description. Bipolar Process Flow Vertical npn Lateral pnp JFET Prepared by Randy Geiger, September 2001. Metalization. Bipolar Process Flow. Oxidation. Bipolar Process Flow. Contact Openings. Isolation Diffusion. p-base diffusion. n+ emitter diffusion.

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Basic Bipolar Process Description

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  1. Basic Bipolar Process Description • Bipolar Process Flow • Vertical npn • Lateral pnp • JFET • Prepared by Randy Geiger, September 2001

  2. Metalization Bipolar Process Flow Oxidation Bipolar Process Flow Contact Openings Isolation Diffusion p-base diffusion n+ emitter diffusion n-epitaxy Buried collector n+ buried collector implant P-substrate

  3. Base Emitter Collector Buried collector n+ buried collector implant Vertical npn BJT

  4. E B C C E B Lateral pnp Modification Lateral pnp BJT

  5. E B C JFET Modification G S D

  6. BJT Layout and Area Issues • BJT Layout • BJT Area Requirements • Comparison of Area between MOS and Bipolar Processes

  7. 1 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 1 5 10 15 20 25 30 35 40 45 50 55

  8. 1 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 1 5 10 15 20 25 30 3l 35 40 45 50 55

  9. 1 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 1 5 10 15 20 25 30 3l 2l 35 40 45 50 55

  10. 1 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 1 5 10 15 20 15l 25 30 3l 2l 35 40 45 50 55

  11. 19l 1 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 1 5 10 15 20 25 2l 30 3l 2l 35 40 45 50 55

  12. 43l 19l 14l 14l 1 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 1 5 10 15 20 25 30 3l 2l 35 40 45 50 55

  13. 43l 19l 14l 14l 14l 1 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 1 5 10 15 20 25 30 3l 2l 35 40 45 50 55

  14. 47l 19l 14l 14l 1 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 1 5 10 15 20 25 30 3l 2l 35 40 45 50 55

  15. 47l 19l 14l 14l 1 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 1 5 10 15 20 25 30 3l 4l 2l 35 40 45 50 55

  16. 47l 14l 14l 1 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 1 5 10 15 20 12l 25 2l 2l 30 6l 3l 4l 2l NOT TO SCALE 35 Note: 24l required Between p-base and isolation diffusion 40 45 50 55

  17. 63l 14l 1 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 1 5 Note: Not to vertical Scale 10 15 20 12l 25 58l 2l 30 6l 3l 2l 2l 35 Note: 24l required Between p-base and isolation diffusion 40 45 50 55

  18. 63l 14l 58l 1 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 1 5 Note: Not to vertical Scale 10 15 20 12l 25 2l 30 6l 3l 2l 2l 35 Note: 24l required Between p-base and isolation diffusion 40 45 50 55

  19. 63l 58l 1 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 1 5 10 15 67l 20 62l 25 30 35 40 Note: Not to vertical Scale 45 50 55

  20. 1 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 1 5 10 15 67l 20 62l 25 30 35 40 Bounding Area = 4154l2 Note: Not to vertical Scale 45 50 55

  21. 1 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 1 5 10 Comparison with Area for n-channel MOSFET in Bulk CMOS 15 20 16l 25 13l 30 35 Bounding Area = 208l2 40 45 50 55

  22. 12l 1 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 1 5 10 Minimum-Sized MOSFET 15 20 14l 25 30 35 Bounding Area = 168l2 Active Area = 6l2 40 45 50 55

  23. 1 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 1 5 10 15 67l 20 62l 25 30 35 40 MOSFET BJT 45 50 Note: Not to vertical Scale 55

  24. Area Comparison between BJT and MOSFET • BJT Area = 4154 l2 • n-channel MOSFET Area = 168 l2 • Area Ratio 25:1

  25. That’s all folks!

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