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Silizium- Mikrostreifen-Detektoren nach 10 Jahren LHC für CMS

Silizium- Mikrostreifen-Detektoren nach 10 Jahren LHC für CMS. A „ Cross-Alps “ CMS collaboration of Bari, Karlsruhe, Padova, Perugia and Wien. Goal: Test complete CMS like Quality assurance Ensure sensor functionality after 10 LHC years. P -irradiated-oxygenated

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Silizium- Mikrostreifen-Detektoren nach 10 Jahren LHC für CMS

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  1. Silizium-Mikrostreifen-Detektoren nach 10 Jahren LHC für CMS A „Cross-Alps“ CMS collaboration of Bari, Karlsruhe, Padova, Perugia and Wien • Goal: • Test complete CMS like Quality assurance • Ensure sensor functionality after 10 LHC years P-irradiated-oxygenated Non-irradiated-oxygenated Non-irradiated-non-oxygenated P-irradiated-non-oxygenated sensors put in a PSI testbeam in very short time DPG 2001 Frank Hartmann (IEKP)

  2. CMS Tracker Design & Layout (1) New all-silicon design: 10 barrel layers 2 inner barrel disk 9 forward disks Blue  double layers Red  single layers Low resistivity to postpone type inversion  lower Vdep after 10 LHC years DPG 2001 Frank Hartmann (IEKP)

  3. CMS Tracker Design & Layout (2) • Use <100> instead of standard <111> silicon • less dangling bonds  less surface damage • ~no increase of interstrip capacitance • after irradiation  no increase in noise • For small width over pitch ratio (0.25) • implement metal overhang on strip • to avoid breakdown (field reaches through SiO2) • more stable detector with respect to bias voltage up to 500V DPG 2001 Frank Hartmann (IEKP)

  4. P-Irradiation at Karlsruhe Karlsruhe Kompaktzyklotron • This time: 34MeV protons. (10 LHC years) • Sensors cooled down to –10°C during irrad. (CMS like operation) • Future CMS QA DPG 2001 Frank Hartmann (IEKP)

  5. Tests in the lab (1) CV IV At 21°C 165V 350V DPG 2001 Frank Hartmann (IEKP)

  6. Tests in the lab (2) ~450nA 101pF ~Same as before 1 - 2.5nA before at 21°C 1.7MW ~Same as before 3.2pF (one neighbour) ~Same as before DPG 2001 Frank Hartmann (IEKP)

  7. One double-sensor module 1 module with: 2 oxygenated sensors APV25S1 prototype hybrid prototype repeater In the cool-box-frame DPG 2001 Frank Hartmann (IEKP)

  8. Assembly at the PSI Electronics Beam Cool-box Bias voltage supply DPG 2001 Frank Hartmann (IEKP)

  9. PSI test 4 - 24 Dec 2000 DPG 2001 Frank Hartmann (IEKP)

  10. Noise Preliminary DPG 2001 Frank Hartmann (IEKP)

  11. Signal / Noise Preliminary DPG 2001 Frank Hartmann (IEKP)

  12. Strip configuration Sensors gallery Micron oxy (KA,PD,PG) Pd 26 pitch 61 mm implant 6.5 mm metal 17.2 mm Micron standard Pd 25 pitch 61mm implant 10 mm metal 10 mm CSEM Ba1 pitch 61 mm implant 12.3 mm metal 11 mm CSEM Ba2 pitch 61 mm implant 12.6 mm metal 12.6 mm DPG 2001 Frank Hartmann (IEKP)

  13. Noise vs. Capacitive load ENC [e] = 400 + 60 / [pF] 600e “readout noise” (bandwidthlimitation) Good agreement with data SNR=16.5 @ C=15pF DPG 2001 Frank Hartmann (IEKP)

  14. S/N of 17-18 with final readout chip and 16 for a full irradiated module looks very promising. S/N differences are more related to CC and Cint values depending on strip width rather than from ox or nox. Sensor parameters like breakdown voltages, leakage currents and strip parameters after irradiation are well within CMS specification.  CMS specifies sensor behavior (parameters) after irradiation and not the oxygen content!!! Conclusion DPG 2001 Frank Hartmann (IEKP)

  15. DPG 2001 Frank Hartmann (IEKP)

  16. Signal DPG 2001 Frank Hartmann (IEKP)

  17. The cool-box from Wien Test performed at –10°C with N2 flushing and Peltier cooling DPG 2001 Frank Hartmann (IEKP)

  18. The bunker& FAST professional cabeling DPG 2001 Frank Hartmann (IEKP)

  19. Signal / Noise Preliminary DPG 2001 Frank Hartmann (IEKP)

  20. Detector Sensors Vdep* (nirr) Ileak*(nirr) (uA) Vbkd Rbias(MW) Cint(pF) Ccoupl(pF) Vdep(irr) Ileak(irr) Vbd(irr) PD26 1962-16 650 1.4 4 95 2015-14 850 1.7 4 95 PG BA1 Csem-13 129 4.6 550 20 1.8 Csem-22 133 4 550 22 1.8 PD27 1968-11 155 850 1.6 2.3 1968-8 126 850 1.6 2.2 KA 1962-17 (*) 165 4 850 2.2 2.1 350 400 850 1962-24 130 800 1.7 (1.7 irrad) 2.3 280 400 800 BA2 Electrical parameters DPG 2001 Frank Hartmann (IEKP)

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